Transistors SMD Type NPN Silicon Planar High Performance Transistors FZT651 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 60 Volt VCEO. +0.1 3.00-0.1 3 Amp continuous current. +0.15 1.65-0.15 +0.2 3.50-0.2 +0.2 6.50-0.2 Features +0.2 0.90-0.2 +0.3 7.00-0.3 4 Low saturation voltage. 1 1 base 3 2 +0.1 0.70-0.1 2.9 4.6 2 collector 3 emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 5 V Peak pulse current IC 3 A Continuous collector current ICM 6 A Power dissipation Ptot 2 W Tj,Tstg -55 to +150 Operating and storage temperature range www.kexin.com.cn 1 Transistors SMD Type FZT651 Electrical Characteristics Ta = 25 Parameter Symbol Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100ìA 80 Collector-emitter breakdown voltage * V(BR)CEO IC=10mA 60 V Emitter-base breakdown voltage V(BR)EBO IE=100ìA 5 V Collector Cut-Off Current ICBO VCB=60V VCB=60V,Ta = 100 Emitter Cut-Off Current IEBO VEB=4V V 0.1 10 ìA 0.1 ìA Collector-emitter saturation voltage * IC=1A, IB=100mA VCE(sat) IC=3A, IB=300mA 0.12 0.43 0.3 0.6 V Base-emitter saturation voltage * VBE(sat) IC=1A, IB=100mA 0.9 1.25 V Base-Emitter Turn-On Voltage * VBE(on) IC=1A, VCE=2V 0.8 1 V Static Forward Current Transfer Ratio Transitional frequency hFE fT Output capacitance Cobo ton Switching times toff * Pulse test: tp = 300 ìs; d 0.02. Marking Marking 2 Testconditons FZT651 www.kexin.com.cn IC=50mA, VCE =2V* 70 200 IC=500mA, VCE =2V* 100 200 IC=1A, VCE =2V* 80 170 IC=2A, VCE =2V* 40 80 IC=100mA, VCE=5V f=100MHz 140 175 MHz 30 VCB=10V, f=1MHz IC=500mA,VCC=10V,IB1=IB2=50mA 300 pF 45 ns 800 ns