Transistors SMD Type NPN Silicon Planar High Current (High Performance) Transistor FZT869 SOT-223 +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 +0.2 6.50-0.2 Extremely low equivalent on-resistance; RCE(sat)44mÙ at 5A. 7 Amp continuous collector current (20 Amp peak). +0.1 3.00-0.1 +0.15 1.65-0.15 Features Unit: mm +0.2 0.90-0.2 +0.3 7.00-0.3 Very low saturation voltages. 4 Excellent gain charateristics specified upto 20 Amp. Ptot = 3 Watts. 1 1 base 3 2 +0.1 0.70-0.1 2.9 4.6 2 collector 3 emitter Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 60 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 6 V Peak pulse current IC 7 A Continuous collector current ICM 20 A Power dissipation Ptot 3 W Tj,Tstg -55 to +150 Operating and storage temperature range www.kexin.com.cn 1 Transistors SMD Type FZT869 Electrical Characteristics Ta = 25 Parameter Symbol Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100ìA 60 120 V Collector-emitter breakdown voltage * V(BR)CEO IC=10mA 25 35 V Emitter-base breakdown voltage V(BR)EBO IE=100ìA 6 8 V Collector Cut-Off Current ICBO VCB=50V VCB=50V,Ta = 100 Emitter Cut-Off Current IEBO VEB=6V 35 67 168 50 1 nA ìA 10 nA 50 110 215 350 mV Collector-emitter saturation voltage * IC=0.5A, IB=10mA I VCE(sat) C=1A, IB=10mA IC=2A, IB=10mA IC=6.5A, IB=150mA Base-emitter saturation voltage * VBE(sat) IC=6.5A, IB=300mA 1.2 V Base-Emitter Turn-On Voltage * VBE(on) IC=6.5A, VCE=1V 1.13 V DC current gain * hFE Transitional frequency fT IC=10mA, VCE=1V IC=1A, VCE=1V IC=7A, VCE=1V IC=20A, VCE=2V IC=100mA, VCE=10V f=50MHz 300 300 200 40 450 450 300 100 100 MHz Output capacitance Cobo VCB=10V, f=1MHz 70 pF Turn-on time t(on) IC=1A, VCC=10V 60 ns Turn-off time t(off) IB1=IB2=100mA 680 ns * Pulse test: tp = 300 ìs; d 0.02. Marking Marking 2 Testconditons FZT869 www.kexin.com.cn