KEXIN FZT869

Transistors
SMD Type
NPN Silicon Planar High Current
(High Performance) Transistor
FZT869
SOT-223
+0.2
3.50-0.2
0.1max
+0.05
0.90-0.05
+0.2
6.50-0.2
Extremely low equivalent on-resistance; RCE(sat)44mÙ at 5A.
7 Amp continuous collector current (20 Amp peak).
+0.1
3.00-0.1
+0.15
1.65-0.15
Features
Unit: mm
+0.2
0.90-0.2
+0.3
7.00-0.3
Very low saturation voltages.
4
Excellent gain charateristics specified upto 20 Amp.
Ptot = 3 Watts.
1
1 base
3
2
+0.1
0.70-0.1
2.9
4.6
2 collector
3 emitter
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
60
V
Collector-emitter voltage
VCEO
25
V
Emitter-base voltage
VEBO
6
V
Peak pulse current
IC
7
A
Continuous collector current
ICM
20
A
Power dissipation
Ptot
3
W
Tj,Tstg
-55 to +150
Operating and storage temperature range
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1
Transistors
SMD Type
FZT869
Electrical Characteristics Ta = 25
Parameter
Symbol
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO IC=100ìA
60
120
V
Collector-emitter breakdown voltage *
V(BR)CEO IC=10mA
25
35
V
Emitter-base breakdown voltage
V(BR)EBO IE=100ìA
6
8
V
Collector Cut-Off Current
ICBO
VCB=50V
VCB=50V,Ta = 100
Emitter Cut-Off Current
IEBO
VEB=6V
35
67
168
50
1
nA
ìA
10
nA
50
110
215
350
mV
Collector-emitter saturation voltage *
IC=0.5A, IB=10mA
I
VCE(sat) C=1A, IB=10mA
IC=2A, IB=10mA
IC=6.5A, IB=150mA
Base-emitter saturation voltage *
VBE(sat) IC=6.5A, IB=300mA
1.2
V
Base-Emitter Turn-On Voltage *
VBE(on) IC=6.5A, VCE=1V
1.13
V
DC current gain *
hFE
Transitional frequency
fT
IC=10mA, VCE=1V
IC=1A, VCE=1V
IC=7A, VCE=1V
IC=20A, VCE=2V
IC=100mA, VCE=10V f=50MHz
300
300
200
40
450
450
300
100
100
MHz
Output capacitance
Cobo
VCB=10V, f=1MHz
70
pF
Turn-on time
t(on)
IC=1A, VCC=10V
60
ns
Turn-off time
t(off)
IB1=IB2=100mA
680
ns
* Pulse test: tp = 300 ìs; d
0.02.
Marking
Marking
2
Testconditons
FZT869
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