Transistors SMD Type PNP Silicon Power Switching Transistor FCX1149A Features 2W power dissipation. 20A peak pulse current. Excellent HFE characteristics up to 10 Amps. Extremely low saturation voltage E.g. 45mv Typ. Extremely low equivalent on-resistance. RCE(sat) 67mÙ at 3A. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -25 V Emitter-base voltage VEBO -5 V Continuous collector current ICM -10 A Peak pulse current IC -3 A Base current IB -500 mA Ptot 1 W Tj,Tstg -55 to +150 Power dissipation Operating and storage temperature range www.kexin.com.cn 1 Transistors SMD Type FCX1149A Electrical Characteristics Ta = 25 Parameter Symbol Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100ìA -30 V Collector-emitter breakdown voltage * V(BR)CEO IC=-10mA -25 V Emitter-base breakdown voltage V(BR)EBO IE=-100ìA -5 V ICBO VCB=-24V -0.3 -100 nA Collector Emitter Cut-Off Current ICES VCE=-20V -0.3 -100 nA Emitter Cut-Off Current IEBO VEB=-4V -0.3 -100 nA Collector-emitter saturation voltage * IC=-0.1A, IB=-1mA IC=-0.5A, IB=-3mA VCE(sat) IC=-1A, IB=-7mA IC=-3A, IB=-100mA IC=-4A, IB=-140mA -45 -100 -140 -200 -230 -80 -170 -240 -300 -350 mV Base-emitter saturation voltage * VBE(sat) IC=-3A, IB=-100mA -930 -1050 mV Base-emitter ON voltage * VBE(on) IC=-3A, VCE=-2V -840 -1000 mV 450 400 260 190 50 800 Collector cut-off current Static Forward Current Transfer Ratio* Transitional frequency hFE fT IC=-10mA,VCE=-2V IC=-0.5A,VCE=-2V IC=-3A,VCE=-2V IC=-5A,VCE=-2V IC=-10A,VCE=-2V 270 250 150 115 IC=-50mA, VCE=-10V, f=50MHz 135 MHz Output capacitance Cobo VCB=-10V, f=1MHz 10 pF Turn-on time t(on) IC=-4A, VCC=-10V 150 ns Turn-off time t(off) IB1=IB2=-40mA 270 ns * Pulse test: tp = 300 ìs; d Marking Marking 2 Testconditons 149 www.kexin.com.cn 0.02.