Transistors SMD Type NPN Silicon Power Switching Transistor FCX619 Features 2W power dissipation. 6A peak pulse current. Excellent HFE characteristics up to 6 amps. Extremely low saturation voltage E.g. 13mv Typ. Extremely low equivalent on-resistance. RCE(sat) 87mÙ at 2.75A. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Continuous collector current ICM 6 A Peak pulse current IC 3.0 A Base current Power dissipation Operating and storage temperature range IB 500 mA Ptot 1.5 W Tj,Tstg -55 to +150 www.kexin.com.cn 1 Transistors SMD Type FCX619 Electrical Characteristics Ta = 25 Parameter Symbol Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100ìA 50 190 V Collector-emitter breakdown voltage * V(BR)CEO IC=10mA 50 65 V Emitter-base breakdown voltage V(BR)EBO IE=100ìA 5 8.3 V Collector cut-off current ICBO VCB=40V 100 nA Collector Emitter Cut-Off Current ICES VCE=40V 100 nA Emitter cut-off current IEBO VEB=4V 100 nA 13 150 190 240 25 220 260 320 mV Collector-emitter saturation voltage * IC=0.1A, IB=10mA I VCE(sat) C=1A, IB=10mA IC=2A, IB=50mA IC=2.75A, IB=100mA Base-emitter saturation voltage * VBE(sat) IC=2.75A, IB=100mA 0.97 1.1 V VBE(on) IC=2.75A, VCE=2V 0.89 1.0 V Base-emitter ON voltage * DC current gain * hFE Transitional frequency fT IC=10mA, VCE=2V IC=200mA,VCE=2V IC=1A,VCE=2V IC=2A,VCE=2V IC=6A,VCE=2V 200 300 200 100 ----- 400 450 400 200 30 IC=50mA, VCE=10V, f=100MHz 100 165 MHz Output capacitance Cobo VCB=10V, f=1MHz 12 Turn-on time t(on) IC=1A, VCC=10V 170 ns Turn-off time t(off) IB1=IB2=10mA 750 ns * Pulse test: tp = 300 ìs; d Marking Marking 2 Testconditons 619 www.kexin.com.cn 0.02. 20 pF