Diodes SMD Type Silicon Schottky Barrier Diode HSM88AS SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 MPAK package is suitable for high density surface mounting and high speed assembly. 0.55 Proof against high voltage. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector A b s o lu te M a x im u m R a tin g s T a = 2 5 S ym bol V a lu e U n it R e v e r s e v o lta g e P a r a m e te r VR 10 V A v e r a g e r e c tifie d c u r r e n t IO 15 mA J u n c tio n te m p e r a tu r e Tj 125 S to r a g e te m p e r a tu r e T s tg - 5 5 to + 1 2 5 Electrical Characteristics Ta = 25 Parameter Symbol Forward voltage VF Conditions Min Typ Max IF = 1 mA 350 420 IF = 10 mA 500 580 Unit mV VR = 2 V 0.2 V R = 10 V 10 C V R =0 V, f = 1 MHz 0.85 Capacitance deviation ÄC V R =0 V, f = 1 MHz 0.10 pF Forward voltage deviation ÄV F IF = 10 mA 10 mV Reverse current IR Capacitance C=200pF , Both forward and ESD-Capability (Note 1) 30 A pF V reverse direction 1 pulse. Note 1. Failure criterion ; IR 400nA at V R =2 V Marking Marking C1 www.kexin.com.cn 1