Diodes SMD Type High-speed diode BAS55 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 High switching speed: max. 6ns 0.55 Small plastic SMD package 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Continuous reverse voltage: max. 60 V +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Repetitive peak forward current: max. 600 mA. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Repetitive peak reverse voltage Symbol Conditions Min Max Unit VRRM 60 V Continuous reverse voltage VR 60 V Continuous forward current IF 250 mA 600 mA Repetitive peak forward current Note 1 IFRM square wave; Tj =25 Non-repetitive peak forward current IFSM t=1 t = 100 prior to surge; 9 s s t = 100 ms Total power dissipation Ptot Storage temperature Tstg Junction temperature Tj Tmab = 25 A 3 1.7 250 ; Note 1 -65 mW +150 150 Note 1. Device mounted on an FR4 printed-circuit board. www.kexin.com.cn 1 Diodes SMD Type High-speed diode BAS55 Electrical Characteristics Ta = 25 Parameter Forward voltage Reverse current Symbol Conditions VF IF = 200 mA;DC value; Note 1 1.0 V V R = 60 V; 100 nA 100 A 2.5 pF 6 ns IR V R = 60 V; T j = 150 Diode capacitance Cd Reverse recovery time trr f = 1 MHz; V R = 0; when switched from IF = 400 mA to IR = 400 mA; R L = 100 Forward recovery voltage Vf r Max ;measured at IR = 40 mA; when switched to IF = 400 mA;tr = 30 ns; 2 when switched to IF = 400 mA;tr = 100 ns; 1.5 Note 1. Tamb = 25 ; device has reached the thermal equilibrium when mounted on an FR4 printed-circuit board. Marking Marking 2 L5p www.kexin.com.cn Unit V