KEXIN BAS55

Diodes
SMD Type
High-speed diode
BAS55
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
0.4
3
1
High switching speed: max. 6ns
0.55
Small plastic SMD package
2
+0.1
0.95-0.1
+0.1
1.9-0.1
Continuous reverse voltage: max. 60 V
+0.05
0.1-0.01
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
Repetitive peak forward current: max. 600 mA.
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Repetitive peak reverse voltage
Symbol
Conditions
Min
Max
Unit
VRRM
60
V
Continuous reverse voltage
VR
60
V
Continuous forward current
IF
250
mA
600
mA
Repetitive peak forward current
Note 1
IFRM
square wave; Tj =25
Non-repetitive peak forward current
IFSM
t=1
t = 100
prior to surge;
9
s
s
t = 100 ms
Total power dissipation
Ptot
Storage temperature
Tstg
Junction temperature
Tj
Tmab = 25
A
3
1.7
250
; Note 1
-65
mW
+150
150
Note
1. Device mounted on an FR4 printed-circuit board.
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1
Diodes
SMD Type
High-speed diode
BAS55
Electrical Characteristics Ta = 25
Parameter
Forward voltage
Reverse current
Symbol
Conditions
VF
IF = 200 mA;DC value; Note 1
1.0
V
V R = 60 V;
100
nA
100
A
2.5
pF
6
ns
IR
V R = 60 V; T j = 150
Diode capacitance
Cd
Reverse recovery time
trr
f = 1 MHz; V R = 0;
when switched from IF = 400 mA to IR = 400 mA;
R L = 100
Forward recovery voltage
Vf r
Max
;measured at IR = 40 mA;
when switched to IF = 400 mA;tr = 30 ns;
2
when switched to IF = 400 mA;tr = 100 ns;
1.5
Note
1. Tamb = 25
; device has reached the thermal equilibrium when mounted on an FR4 printed-circuit board.
Marking
Marking
2
L5p
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Unit
V