Diodes SMD Type Silicon Switching Diode Array BAW101 Unit: mm Features Electrically insulated high-voltage medium-speed diodes A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r S ym bol V a lu e U n it R e v e rs e v o lta g e P e a k re v e rs e v o lta g e F o rw a rd c u rre n t P e a k fo rw a rd c u rre n t VR 300 V V RM 300 V IF 250 mA IF M 500 mA S u rg e fo rw a rd c u rre n t, t = 1 s IF S 4 .5 A T o ta l p o w e r d is s ip a tio n , T S 35 P to t 350 mW Tj 150 T s tg -6 5 to + 1 5 0 J u n c tio n te m p e ra tu re S to ra g e te m p e ra tu re ra n g e J u n c tio n - a m b ie n t 1) J u n c tio n - s o ld e rin g p o in t R th JA 470 K /W R th JS 330 K /W N o te 1 .P a c k a g e m o u n te d o n e p o xy p c b 4 0 m m 40 m m 1 .5 m m /6 c m 2 C u www.kexin.com.cn 1 Diodes SMD Type BAW101 Electrical Characteristics Ta = 25 Parameter Symbol Breakdown voltage VBR Forward voltage VF Reverse current IR Conditions I(BR) = 100 Min A Typ Cd Reverse recovery time trr IF = 100 mA 1.3 V VR = 250 V 150 nA 50 A VR = 0 V, f = 1 MHz IF = 10 mA, IR = 10 mA, RL = 100 measured at IR = 1 mA Marking Marking 2 JPs www.kexin.com.cn Unit V VR = 250 V, TA = 150 Diode capacitance Max 300 6 1 pF