Diodes SMD Type Silicon Switching Diode Array BAW100 Unit: mm Features For high-speed switching Electrically insulated diodes A b s o lu t e M a x im u m R a t in g s T a = 2 5 P a ra m e te r S ym bol V a lu e U n it VR 75 V R e v e r s e v o lt a g e P e a k r e v e r s e v o lt a g e F o rw a rd c u rre n t VRM 85 V IF 200 mA s IF S 4 .5 A T o t a l p o w e r d is s ip a t io n , T S = 3 1 P to t 330 mW Tj 150 S u rg e fo rw a rd c u rre n t, t = 1 J u n c t io n t e m p e r a t u r e S to ra g e te m p e ra tu re ra n g e T s tg -6 5 to + 1 5 0 J u n c t io n - a m b ie n t 1 ) R th JA 500 K /W J u n c t io n - s o ld e r in g p o in t R th JS 360 K /W N o te 1 .P a c k a g e m o u n te d o n e p o x y p c b 4 0 m m 40 m m 1 .5 m m /6 c m 2 Cu www.kexin.com.cn 1 Diodes SMD Type BAW100 Electrical Characteristics Ta = 25 Parameter Breakdown voltage Forward voltage Symbol Conditions Min VBR I(BR) = 100 A 85 VF IR Diode capacitance Cd Reverse recovery time trr IF = 10 mA 855 IF = 50 mA 1000 IF = 150 mA 1250 VR = 25 V, TA = 150 VR = 75 V, TA = 150 50 VR = 0 V, f = 1 MHz Marking 2 JSs www.kexin.com.cn mV 1 30 IF = 10 mA, IR = 10 mA, RL = 100 Unit V 715 measured at IR = 1 mA Marking Max IF = 1 mA VR = 75 V Reverse current Typ A 2 pF 6 ns