Transistors SMD Type PNP General Purpose Double Transistor KC856S(BC856S) SOT-363 1.3 Unit: mm +0.1 -0.1 0.525 0.65 +0.15 2.3-0.15 Two transistors in one package +0.1 1.25-0.1 Features 0.36 Reduces number of components and board space No mutual interference between the transistors. +0.05 0.1-0.02 +0.05 0.95-0.05 0.1max +0.1 0.3-0.1 +0.1 2.1-0.1 1 E1 4 E2 2 B1 5 B2 3 C2 6 C1 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -65 V Emitter-Base Voltage VEBO -5 V IC -100 mA PD 200 mW 416 /W Collector Current - Continuous Power Dissipation Thermal Resistance, Junction to Ambient R Operating and Storage Junction Temperature Range JA TJ, Tstg -65 to +150 Electrical Characteristics Ta = 25 Parameter Symbol ICBO Collector-Cutoff Current Testconditons -15 nA A -100 nA IC = -10 mA, IB =- 0.5 mA -100 mV IC = -100 mA, IB =- 5.0 mA -300 mV DC Current Gain hFE IC = -2.0 mA, VCE = -5.0 V Base-Emitter Saturation Voltage VBE(sat) Cob Transistion frequency fT Unit -5.0 IC=0,VEB=-5V Output Capacitance Max VCB =- 30 V, IE = 0 IEBO VCE(sat) Typ VCB =- 30 V, IE = 0, TA = 150 Emitter- cutoff current Collector-Emitter Saturation Voltage Min 110 IC = -10 mA, IB=-0.5mA 700 VCB = -10 V, f = 1.0 MHz IC = -10 mA, VCE = -5.0V,f = 100 mHz mV 2.5 100 pF MHz Marking Marking 5F www.kexin.com.cn 1