TYSEMI BC856S

SMD Type
Product specification
KC856S(BC856S)
SOT-363
1.3
Unit: mm
+0.1
-0.1
0.525
0.65
+0.15
2.3-0.15
Two transistors in one package
+0.1
1.25-0.1
Features
0.36
Reduces number of components and board space
No mutual interference between the transistors.
+0.05
0.1-0.02
+0.05
0.95-0.05
0.1max
+0.1
0.3-0.1
+0.1
2.1-0.1
1 E1
4 E2
2 B1
5 B2
3 C2
6 C1
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
-80
V
Collector-Emitter Voltage
VCEO
-65
V
Emitter-Base Voltage
VEBO
-5
V
IC
-100
mA
PD
200
mW
416
/W
Collector Current - Continuous
Power Dissipation
Thermal Resistance, Junction to Ambient
R
Operating and Storage Junction Temperature Range
JA
TJ, Tstg
-65 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector-Cutoff Current
ICBO
Testconditons
-15
nA
A
-100
nA
IC = -10 mA, IB =- 0.5 mA
-100
mV
IC = -100 mA, IB =- 5.0 mA
-300
mV
DC Current Gain
hFE
IC = -2.0 mA, VCE = -5.0 V
Output Capacitance
VBE(sat)
Cob
Transistion frequency
fT
Unit
-5.0
IC=0,VEB=-5V
Base-Emitter Saturation Voltage
Max
VCB =- 30 V, IE = 0
IEBO
VCE(sat)
Typ
VCB =- 30 V, IE = 0, TA = 150
Emitter- cutoff current
Collector-Emitter Saturation Voltage
Min
110
IC = -10 mA, IB=-0.5mA
700
VCB = -10 V, f = 1.0 MHz
mV
2.5
IC = -10 mA, VCE = -5.0V,f = 100 mHz
100
pF
MHz
Marking
Marking
5F
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 1