Transistors IC SMD Type PNP General Purpose Transistors BCX17,BCX18 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 Features Low current (max. 100 mA). +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Low voltage (max. 32 V). 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol BCX17 BCX18 Unit Collector-base voltage Parameter VCBO -50 -30 V Collector-emitter voltage VCEO -45 -25 V VEBO -5 V IC -500 mA ICM -1000 mA Peak base current IBM -200 mA Total power dissipation * Ptot 250 mW Storage temperature Tstg -65 to +150 Junction temperature Tj 150 Operating ambient temperature Ramb -65 to +150 Thermal resistance from junction to ambient * Rth j-a 500 Emitter-base voltage Collector current Peak collector current K/W * Transistor mounted on an FR4 printed-circuit board. Electrical Characteristics Ta = 25 Parameter Symbol Collector cutoff current Emitter cutoff current DC current gain IE = 0; VCB = -20 V ICBO IE = 0; VCB = -20 V; Tj = 100 IEBO IC = 0; VEB = -5 V hFE Collector-emitter saturation voltage Testconditons ICBO Min IC = -100 mA; VCE = -1 V 100 IC = -300 mA; VCE = -1 V 70 IC = -500 mA; VCE = -1 V 40 Typ Max Unit -100 nA -5 ìA -100 nA 600 VCE(sat) IC = -500 mA; IB = -50 mA -620 mV Base to emitter voltage VBE IC = -500 mA; VCE = -1 V -1.2 V Collector capacitance CC IE = ie = 0; VCB = -10 V; f = 1 MHz Transition frequency fT IC = -10 mA; VCE = -5 V; f = 100 MHz 9 80 pF MHz hFE Classification TYPE BCX17 BCX18 Marking T1 T2 www.kexin.com.cn 1