Transistors IC SMD Type NPN General Purpose Transistor 2PD601A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Low current (max. 100 mA) 0.4 3 Features 1 0.55 Low voltage (max. 50 V). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 6 V Collector current (DC) IC 100 mA Peak collector current ICM 200 mA Peak base current IBM 100 mA Total power dissipation Tamb 25 ; * Ptot 250 mW Storage temperature Tstg -65 to +150 Junction temperature Tj 150 Operating ambient temperature Tamb -65 to +150 Thermal resistance from junction to ambient * Rth j-a 500 K/W * Transistor mounted on an FR4 printed-circuit board. www.kexin.com.cn 1 Transistors IC SMD Type 2PD601A Electrical Characteristics Ta = 25 Parameter Symbol Collector cut-off current ICBO Emitter cut-off current IEBO DC current gain Testconditons Max Unit 10 nA IE = 0; VCB = 60 V; Tj = 150 5 ìA IC = 0; VEB = 5 V 10 nA IE = 0; VCB = 60 V 2PD601AQ 2PD601AR IC = 2 mA; VCE = 10 V; * hFE 2PD601AS DC current gain IC = 100 mA; VCE = 2 V; hFE Collector-emitter saturation voltage Transition frequency 210 340 290 460 90 500 mV 3.5 pF fT IC = 2 mA; VCE = 10 V; f = 100 MHz * 100 120 140 * Pulse test: tp 300 ìs; ä 0.02. Marking Type Number 2PD601AQ 2PD601AR 2PD601AS Marking ZQ ZR ZS www.kexin.com.cn 260 IE = ie = 0; VCB = 10 V; f = 1 MHz 2PD601AS 2 160 IC = 100 mA; IB = 10 mA; * 2PD601AQ 2PD601AR Typ Cc VCEsat Collector capacitance Min MHz