KEXIN 2PD601AS

Transistors
IC
SMD Type
NPN General Purpose Transistor
2PD601A
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
+0.1
1.3-0.1
+0.1
2.4-0.1
Low current (max. 100 mA)
0.4
3
Features
1
0.55
Low voltage (max. 50 V).
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
6
V
Collector current (DC)
IC
100
mA
Peak collector current
ICM
200
mA
Peak base current
IBM
100
mA
Total power dissipation Tamb 25 ; *
Ptot
250
mW
Storage temperature
Tstg
-65 to +150
Junction temperature
Tj
150
Operating ambient temperature
Tamb
-65 to +150
Thermal resistance from junction to ambient *
Rth j-a
500
K/W
* Transistor mounted on an FR4 printed-circuit board.
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1
Transistors
IC
SMD Type
2PD601A
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
DC current gain
Testconditons
Max
Unit
10
nA
IE = 0; VCB = 60 V; Tj = 150
5
ìA
IC = 0; VEB = 5 V
10
nA
IE = 0; VCB = 60 V
2PD601AQ
2PD601AR
IC = 2 mA; VCE = 10 V; *
hFE
2PD601AS
DC current gain
IC = 100 mA; VCE = 2 V;
hFE
Collector-emitter saturation voltage
Transition frequency
210
340
290
460
90
500
mV
3.5
pF
fT
IC = 2 mA; VCE = 10 V; f = 100 MHz *
100
120
140
* Pulse test: tp 300 ìs; ä 0.02.
Marking
Type Number
2PD601AQ
2PD601AR
2PD601AS
Marking
ZQ
ZR
ZS
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260
IE = ie = 0; VCB = 10 V; f = 1 MHz
2PD601AS
2
160
IC = 100 mA; IB = 10 mA; *
2PD601AQ
2PD601AR
Typ
Cc
VCEsat
Collector capacitance
Min
MHz