KEXIN KDS6375

IC
IC
SMD Type
P-Channel 2.5V Specified PowerTrench MOSFET
KDS6375
Features
-8 A, -20 V. RDS(ON) = 24m
@ VGS = -4.5 V
RDS(ON) = 32m
@ VGS =-2.5V
Low gate charge(26nC typical)
High performance trench technology for extremely low RDS(ON)
High power and current handling capability
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain to Source Voltage
VDSS
-20
V
Gate to Source Voltage
VGS
8
V
Drain Current Continuous (Note 1a)
ID
Drain Current Pulsed
Power Dissipation for Single Operation (Note 1a)
Power Dissipation for Single Operation (Note 1b)
A
-50
A
2.5
PD
Power Dissipation for Single Operation (Note 1c)
Operating and Storage Temperature
-8
1.2
W
1
TJ, TSTG
-55 to 175
Thermal Resistance Junction to Ambient (Note 1a)
R
JA
50
/W
Thermal Resistance Junction to Ambient (Note 1c)
R
JA
125
/W
Thermal Resistance Junction to Case (Note 1)
R
JC
25
/W
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1
IC
IC
SMD Type
KDS6375
Electrical Characteristics Ta = 25
Parameter
Drain-Source Breakdown Voltage
Symbol
BVDSS
Breakdown Voltage Temperature Coefficient
VGS = 0 V, ID = -250
ID = -250
IDSS
VDS = -16 V, VGS = 0 V
Gate-Body Leakage, Forward
IGSSF
VGS = 8V, VDS = 0 V
Gate-Body Leakage, Reverse
IGSSR
VGS = -8 V, VDS = 0 V
Gate Threshold Voltage(Not 2)
VGS(th)
VDS = VGS, ID = -250
Static Drain-Source On-Resistance(Not 2)
On-State Drain Current
ID = -250
RDS(on)
ID(on)
Forward Transconductance
gFS
Input Capacitance
Ciss
A
Min
Typ
Max
-20
Unit
V
-13
A, Referenced to 25
Zero Gate Voltage Drain Current
Gate Threshold Voltage Temperature
Coefficient(Not 2)
mV/
-1
A
-0.4
-0.7
100
nA
-100
nA
-1.5
V
3
A, Referenced to 25
mV/
VGS = -4.5 V, ID =-8 A
14
24
VGS = -2.5 V, ID = -7 A
19
32
VGS = -4.5 V, ID =-8 A,TJ = 125
18
39
VGS = -4.5 V, VDS = -5V
VDS = -5 V, ID = -8A
VDS = -10 V, VGS = 0 V,f = 1.0 MHz
A
-50
m
A
35
S
2694
pF
Output Capacitance
Coss
480
pF
Reverse Transfer Capacitance
Crss
229
pF
Turn-On Delay Time
td(on)
12
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Drain-Source Diode Forward Voltage
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VDD = -10 V, ID = -1 A,VGS = -4.5 V, RGEN
= 6 (Note 2)
tf
Total Gate Charge
Maximum Continuous Drain-Source Diode
Forward Current
2
Testconditons
VDS = -10 V, ID =-8 A,VGS=-4.5V(Note 2)
VGS = 0 V, IS = -2.1A (Not 2)
ns
9
17
ns
124
197
ns
57
92
ns
26
36
nC
5
nC
6
nC
IS
VSD
22
-0.7
-2.1
A
-1.2
V