KEXIN KDS8333C

Transistors
IC
SMD Type
60V Complementary PowerTrench MOSFET
KDS8333C
Features
N-Channel
4.1 A, 30 V
RDS(ON) = 80m
RDS(ON) = 130m
@ VGS = 10 V
@ VGS =4.5V
P-Channel
-3.4 A, 30 V RDS(ON) = 130 m
RDS(ON) = 200 m
@ VGS =- 10 V
@ VGS =-4.5V
Low gate charge
High performance trench technology for extremely low RDS(ON).
High power and handling capability in a widely used
surface mount package.
Absolute Maximum Ratings Ta = 25
Symbol
N-Channel
P- Channel
Unit
Drain to Source Voltage
Parameter
VDSS
30
-60
V
Gate to Source Voltage
VGS
20
V
Drain Current Continuous (Note 1a)
ID
Drain Current Pulsed
Power Dissipation for Single Operation
PD
PD
-3.4
A
20
-20
A
2
W
1
W
0.9
(Note 1c)
Operating and Storage Temperature
4.1
1.6
Power Dissipation for Single Operation (Note 1a)
(Note 1b)
16
TJ, TSTG
-55 to 150
Thermal Resistance Junction to Ambient (Note 1a)
R
JA
78
/W
Thermal Resistance Junction to Case
R
JC
40
/W
(Note 1)
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Transistors
IC
SMD Type
KDS8333C
Electrical Characteristics Ta = 25
Parameter
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250
IDSS
Gate-Body Leakage
IGSS
VGS(th)
A, Referenced to 25
Min
N-Ch
30
P-Ch
-30
25
P-Ch
-22
N-Ch
1
P-Ch
-1
VGS =
16V, VDS = 0 V
N-Ch
100
VGS =
20 V, VDS = 0 V
P-Ch
100
VDS = VGS, ID = 250
A
VDS = VGS, ID = -250
A
A, Referenced to 25
A, Referenced to 25
N-Ch
1
1.7
3
P-Ch
-1
-1.8
-3
N-Ch
-4.2
P-Ch
3.7
Static Drain-Source On-Resistance
RDS(on)
67
N-Ch
81
130
145
VGS = -10 V, ID =-3.4A
105
130
167
200
147
220
P-Ch
VGS = -4.5 V, ID =-2.5A
On-State Drain Current
Forward Transconductance
gFS
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Gate Resistance
Crss
RG
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
2
ID(on)
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Qgd
VGS = 10 V, VDS = 5V
N-Ch
10
VGS = -10 V, VDS = -5V
P-Ch
-5
VDS = 5V, ID = 4.1A
N-Ch
9
VDS = -5V, ID = -3.4A
P-Ch
5
N-Channel
N-Ch
282
VDS = 10 V, VGS = 0 V,f = 1.0 MHz
P-Ch
185
pF
49
P-Channel
56
VDS = -10 V, VGS = 0 V,f = 1.0 MHz
N-Ch
20
P-Ch
26
N-Ch
2.3
VGS=-15 mV, f=1.0MHz
P-Ch
-9.6
N-Channel
N-Ch
4.5
9
VDD = 10 V, ID = 1 A,
P-Ch
4.5
9
N-Ch
6
12
P-Ch
13
23
(Note 2)
pF
pF
P-Channel
N-Ch
19
34
VDD = -10 V, ID = -1 A,
P-Ch
11
20
N-Ch
1.5
3
P-Ch
2
4
VGS = -4.5 V, RGEN = 6
(Note 2)
N-Channel
N-Ch
4.7
6.6
VDS =10V,ID=4.1A,VGS=4.5V
P-Ch
4.1
5.7
RGEN = 6
N-Ch
0.9
P-Channel
P-Ch
0.8
VDS=-10V,ID=-3.4A,VGS=-4.5V(Note 2)
N-Ch
0.6
P-Ch
0.4
(Note 2)
m
S
P-Ch
VGS = 4.5 V, RGEN = 6
V
A
N-Ch
VGS= 15 mV, f=1.0MHz
nA
80
103
VGS = -10 V, ID =-3.4 A,TJ = 125
A
mV/
VGS = 4.5 V, ID =3.2 A
VGS = 10 V, ID = 4.1 A,TJ = 125
Unit
mV/
VDS = -24 V, VGS = 0 V
ID = -250
RDS(on)
Max
V
N-Ch
VGS = 10 V, ID =4.1A
Static Drain-Source On-Resistance
Typ
VDS = 24V, VGS = 0 V
ID = 250
Gate Threshold Voltage
Temperature Coefficient
A
A, Referenced to 25
ID = -250
Zero Gate Voltage Drain Current
A
VGS = 0 V, ID = -250
ID = 250
Breakdown Voltage Temperature
Coefficient
Gate Threshold Voltage
Testconditons
Symbol
ns
ns
ns
ns
nC
nC
nC
Transistors
IC
SMD Type
KDS8333C
Electrical Characteristics Ta = 25
Parameter
Symbol
Drain-Source Diode Forward Voltage
VSD
Diode Reverse Recovery Time
trr
Diode Reverse Recovery Charge
Qrr
Testconditons
Min
Typ
Max
VGS = 0 V, IS = 1.3A (Not 2)
N-Ch
0.8
1.2
VGS = 0 V, IS = -1.3A (Not 2)
P-Ch
0.8
-1.2
IF = 4.1 A, diF/dt = 100 A/
N-Ch
16.3
P-Ch
14.5
IF = -3.4 A, diF/dt = 100 A/
IF = 4.1 A, diF/dt = 100 A/
IF = -3.4 A, diF/dt = 100 A/
s
s
s
s
N-Ch
26.7
P-Ch
21.1
Unit
V
nS
nC
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