Transistors IC SMD Type 500V P-Channel MOSFET KQD3P50 Features -1.2A, -500V, RDS(on) = 4.9 +0.15 6.50-0.15 +0.2 5.30-0.2 @VGS = -10 V +0.15 1.50-0.15 TO-252 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 100% avalanche tested Improved dv/dt capability 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 0.127 max 3.80 +0.15 5.55-0.15 +0.1 0.80-0.1 +0.25 2.65-0.1 Fast switching +0.28 1.50-0.1 +0.2 9.70-0.2 Low Crss ( typical9.5 pF) +0.15 0.50-0.15 Low gate charge ( typical 18 nC) 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Symbol Rating Unit VDSS -500 V Drain Current Continuous (TC=25 ) ID Drain Current Continuous (TC=100 ) Drain Current Pulsed *1 IDM -2.1 A -1.33 A -8.4 A Gate-Source Voltage VGSS 30 Single Pulsed Avalanche Energy*2 EAS 250 mJ Avalanche Current *1 IAR -2.1 A V Repetitive Avalanche Energy *1 EAR 5 mJ Peak Diode Recovery dv/dt *3 dv/dt -4.5 V/ns PD 2.5 W Power dissipation @ TA=25 Power dissipation @ TC=25 50 PD 0.4 Derate above 25 Operating and Storage Temperature TJ, TSTG -55 to150 TL 300 Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds W W/ Thermal Resistance Junction to Case R JC 2.5 /W Thermal Resistance Junction to Ambient *4 R JA 50 /W Thermal Resistance Junction to Ambient R JA 110 /W *1 Repetitive Rating:Pulse width limited by maximum junction temperature *2 l=102mH,IAS=-2.1A,VDD=-50V,RG=25 ,Startion TJ=25 *3 ISD -2.7A,di/dt 200A/ S,VDD BVDSS,Startiong TJ=25 *4 When mounted on the minimum pad size recommended (PCB Mount) www.kexin.com.cn 1 Transistors IC SMD Type KQD3P50 Electrical Characteristics Ta = 25 Parameter Symbol Drain-Source Breakdown Voltage BVDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Min Max Unit V 0.42 ID = -250 A, Referenced to 25 IDSS Typ -500 mV/ VDS = -500 V, VGS = 0 V -1 A VDS = -400 V, TC=125 -10 A Gate-Body Leakage Current,Forward IGSSF VGS = -30 V, VDS = 0 V -100 nA Gate-Body Leakage Current,Reverse IGSSR VGS =30 V, VDS = 0 V 100 nA Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250 A -5.0 V Static Drain-Source On-Resistance -3.0 RDS(on) VGS = -10 V, ID = -1.05A 3.9 Forward Transconductance gFS VDS = -50 V, ID =-1.05A * 2.1 Input Capacitance Ciss Output Capacitance Coss 70 90 pF Reverse Transfer Capacitance Crss 9.5 12 pF Turn-On Delay Time td(on) 12 35 ns 56 120 ns 35 80 ns 45 100 ns 18 23 Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time 2 Testconditons VGS = 0 V, ID = -250 A 510 VDS = -25 V, VGS = 0 V,f = 1.0 MHz VDD = -250 V, ID = -2.7A,RG=25 * tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = -400 V, ID = -2.7A,VGS = -10 V * 4.9 S 660 pF nC 3.6 nC 9.2 nC Maximum Continuous Drain-Source Diode Forwrad Current IS -2.1 A Maximum Pulsed Drain-Source Diode Forward Current ISM -8.4 A Drain-Source Diode Forward Voltage VSD -5.0 V Diode Reverse Recovery Time trr Diode Reverse Recovery Current Qrr * Pulse Test: Pulse Width 2.0% www.kexin.com.cn 300 s, Duty Cycle VGS = 0 V, IS =-2.1 A VGS = 0 V,dIF/dt = 100 A/ s,IS=-2.7A* 200 1.5 ns C