MOSFET IC DIP Type SMD Type Type Product specification 2N60 TO-220 Features RDS(ON) = 3.8 @VGS = 10V. Low gate charge ( typical 9.0 nC). Low Crss ( typical 5.0 pF). Fast switching capability. 1 Gate 2 Drain 3 Source Avalanche energy specified Improved dv/dt capability. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS 30 V 2.0 1.26 A Drain Current - Continuous (TC = 25 ) ----------------- Continuous (TC = 100 ) ID Unit Drain Current - Pulsed * 1 IDP 8.0 A Single Pulsed Avalanche Energy * 2 EAS 140 mJ Avalanche Current * 1 IAR 2.0 A Repetitive Avalanche Energy * 1 EAR 4.5 mJ Peak Diode Recovery dv/dt * 3 dv/dt 4.5 V/ns Power Dissipation (TC = 25 ) -------- Derate above 25 PD 44 0.36 W W/ TJ, Tstg -55 to +150 TL 300 Thermal Resistance, Junction-to-Case RèJC 4 /W Thermal Resistance, Junction-to-Ambient RèJA 54 /W Operating and Storage Temperature Range Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds * 1. Repetitive Rating : Pulse width limited by maximum junction temperature. * 2. L = 64mH, IAS = 2.0A, VDD = 50V, RG = 25 , Starting TJ = 25 * 3. ISD 2.4A, di/dt 200A/µs, VDD http://www.twtysemi.com BVDSS, Starting TJ = 25 [email protected] 4008-318-123 1 of 2 MOSFET IC SMDType Type Type DIP Product specification 2N60 Electrical Characteristics Ta = 25 Parameter Symbol Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current, Forward IGSSF Gate-Body Leakage Current, Reverse Test conditons Min VGS = 0 V, ID = 250 ìA Typ Max 600 Unit V VDS = 600 V, VGS = 0 V 10 VDS = 480 V, TC = 125 100 A VGS = 30 V, VDS = 0 V 100 nA IGSSR VGS = -30 V, VDS = 0 V -100 nA Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 ìA 4.0 V Static Drain-Source On-Resistance RDS(on) VGS = 10 V, ID = 1 A Forward Transconductance gFS 2.0 3.8 VDS = 50V, ID = 1 A * 1 A 5.0 2.25 S 270 350 pF 40 50 pF Crss 5 7 pF Turn-On Delay Time td(on) 10 30 ns Turn-On Rise Time tr 25 60 ns Turn-Off Delay Time td(off) 20 50 ns Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz VDD = 300 V, ID = 2.4 A, RG = 25 -------*1,2 Turn-Off Fall Time tf 25 60 ns Total Gate Charge Qg 9 11 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 480 V, ID = 2.4A, VGS = 10 V------*1,2 1.6 nC 4.3 nC Maximum Continuous Drain-Source Diode Forward Current IS 2 A Maximum Pulsed Drain-Source Diode Forward Current ISM 8 A Drain-Source Diode Forward Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr * 1. Pulse Test : Pulse width 300µs, Duty cycle VGS = 0 V, IS = 2.0 A VGS = 0 V, IS = 2.4 A, dIF / dt = 100 A/ s * 1 1.4 180 0.72 V ns C 2% * 2. Essentially independent of operating temperature. http://www.twtysemi.com [email protected] 4008-318-123 2 of 2