Transistors IC SMD Type 400V P-Channel MOSFET KQB4P40 1 .2 7 -0+ 0.1.1 TO-263 Features 3.5A, -400V, RDS(on) = 3.1 Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 @VGS = -10 V 5 .2 8 -0+ 0.2.2 100% avalanche tested Improved dv/dt capability 0.1max +0.1 1.27-0.1 Fast switching +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 Low Crss ( typical 11 pF) 2 .5 4 -0+ 0.2.2 8 .7 -0+ 0.2.2 5 .6 0 Low gate charge ( typical 18 nC) +0.2 0.4-0.2 gate 11Gate drain 22Drain source 33Source Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Symbol Rating VDSS -400 V -3.5 A -2.2 A -14 A Drain Current Continuous TC=25 ID Drain Current Continuous TC=100 Drain Current - Pulsed (Note 1) IDM Gate-Source Voltage VGSS 30 Single Pulsed Avalanche Energy (Note 2) EAS 260 Unit V mJ Avalanche Current (Note 1) IAR -3.5 A Repetitive Avalanche Energy (Note 1) EAR 8.5 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt -4.5 V/ns 3.13 W 85 W Power dissipation @ Ta=25 Power dissipation @ Tc=25 PD 0.68 Derate above 25 Operating and Storage Temperature Range Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds TJ, TSTG -55 to 150 TL 300 Thermal Resistance Junction to Case R JC Thermal Resistance Junction to Ambient * R Thermal Resistance Junction to Ambient R W/ 1.47 /W JA 40 /W JA 62.5 /W * When mounted on the minimum pad size recommended (PCB Mount) www.kexin.com.cn 1 Transistors IC SMD Type KQB4P40 Electrical Characteristics Ta = 25 Parameter Symbol Drain-Source Breakdown Voltage BVDSS Breakdown Voltage Temperature Coefficient Testconditons VGS = 0 V, ID = -250 ID = -250 Zero Gate Voltage Drain Current Max -400 Unit V 0.36 A, Referenced to 25 V/ -1 A VDS = -320V, TC=125 -10 A IGSSF VGS = -30 V, VDS = 0 V -100 nA 100 nA -5.0 V Gate-Body Leakage, Reverse IGSSR VGS = 30V, VDS = 0 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250 Static Drain-Source On-Resistance RDS(on) VGS = -10 V, ID = -1.75A VDS = -50 V, ID = -1.75 A Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss A VDS = -25 V, VGS = 0 V,f = 1.0 MHz -3.0 2.44 3.1 2.7 S 520 680 pF 80 105 pF Reverse Transfer Capacitance Crss 11 15 pF Turn-On Delay Time td(on) 13 35 ns Turn-On Rise Time tr 55 120 ns Turn-Off Delay Time td(off) 35 80 ns 37 85 ns 18 23 nC Turn-Off Fall Time VDD = -200 V, ID = -3.5 A,RG = 25 (Note4,5) tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = -320 V, ID = -3.5 A,VGS = -10 V(Note4,5) 5.8 nC 9.4 nC Maximum Continuous Drain-Source Diode Forward Current IS -3.5 A Maximum Pulsed Drain-Source Diode Forward Current ISM -14 A Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = -3.5 A -5 V Reverse Recovery Time trr VGS = 0 V, IS = -3.5 A, 260 ns Reverse Recovery Charge Qrr dIF / dt = 100 A/ 1.4 c Note: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 37mH, IAS = -3.5A, VDD = -50V, RG = 25 3. ISD -3.5A, di/dt 200A/ 4. Pulse Test : Pulse width s, VDD , Starting TJ = 25 BVDSS, Starting TJ = 25 300 s, Duty cycle 5. Essentially independent of operating temperature 2 Typ VDS = -400 V, VGS = 0 V IDSS Gate-Body Leakage, Forward A Min www.kexin.com.cn 2% s (Note 4)