IC
IC
SMD Type
HEXFET Power MOSFET
KRF7317
Features
Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Fully Avalanche Rated
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Symbol
N-Channel
P-Channel
Unit
VDS
20
-20
V
Continuous Drain Current Ta = 25
ID
6.6
-5.3
Continuous Drain Current Ta = 70
ID
5.3
-4.3
Pulsed Drain Current
IDM
26
-21
IS
2.5
Continuous Source Current (Diode Conduction)
Power Dissipation
@Ta= 25
*2
Power Dissipation
@Ta= 70
*2
-2.5
2.0
PD
A
W
1.3
Single Pulse Avalanche Energy
EAS
100
150
mJ
Avalanche Current
IAR
4.1
-2.9
A
Repetitive Avalanche Energy
EAR
Peak Diode Recovery dv/dt *1
dv/dt
Gate-to-Source Voltage
VGS
Junction and Storage Temperature Range
P-Channel ISD
4.1A, di/dt
-2.9A, di/dt
R
92A/
-77A/
*2 Surface mounted on FR-4 board, t
5.0
s, VDD
s, VDD
V(BR)DSS, TJ
V/ ns
V
-55 to + 150
62.5
JA
V(BR)DSS, TJ
mJ
-5
12
TJ, TSTG
Maximum Junction-to-Ambient *2
*1 N-Channel ISD
0.20
/W
150
150
10sec.
www.kexin.com.cn
1
IC
IC
SMD Type
KRF7317
Electrical Characteristics Ta = 25
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Testconditons
Symbol
20
VGS = 0V, ID = -250 A
P-Ch
-20
V(BR)DSS/
ID = 1mA,Reference to 25
N-Ch
0.027
TJ
ID = -1mA,Reference to 25
P-Ch
0.031
V(BR)DSS
RDS(on)
VGS = 2.7V, ID = 5.2A*1
VGS = -4.5V, ID = -2.9A*1
VGS = -2.7V, ID = -1.5A*1
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
gfs
IDSS
IGSS
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain ("Miller") Charge
Qgd
Rise Time
Turn-Off Delay Time
Fall Time
2
VGS(th)
Total Gate Charge
Turn-On Delay Time
td(on)
tr
td(off)
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Max
V/
0.023 0.029
N-Ch
0.030 0.046
0.049 0.058
P-Ch
0.082 0.098
VDS = VGS, ID = 250 A
0.7
VDS = VGS, ID = -250 A
P-Ch
-0.7
VDS =10V, ID = 6.0A*1
N-Ch
20
VDS = -10V, ID = -1.5A*1
P-Ch
5.9
VDS = 16V, VGS = 0V
N-Ch
1.0
VDS = -16V, VGS = 0V
P-Ch
-1.0
VDS = 16V, VGS = 0V, TJ = 55
N-Ch
5.0
VDS = -16V, VGS = 0V, TJ = 55
P-Ch
-25
VGS =
12V
V
S
N-Ch
100
P-Ch
100
N-Channel
N-Ch
18
27
ID =6.0A,VDS = 10V,VGS =4.5V
P-Ch
19
29
N-Ch
2.2
3.3
P-Channel
P-Ch
4.0
6.1
ID = -2.9A,VDS = -16V,VGS = -4.5V
N-Ch
6.2
9.3
P-Ch
7.7
12
N-Channel
N-Ch
8.1
12
VDD = 10V,ID = 1.0A,RG = 6.0
P-Ch
15
22
RD = 10
N-Ch
17
25
P-Channel
P-Ch
40
60
VDD = -10V,ID = -2.9A,RG = 6.0
N-Ch
38
57
P-Ch
42
63
N-Ch
31
47
73
RD = 3.4
Unit
V
N-Ch
tf
Input Capacitance
www.kexin.com.cn
Typ
N-Ch
VGS = 4.5V, ID = 6.0A*1
Static Drain-to-Source On-Resistance
Min
VGS = 0V, ID = 250 A
P-Ch
49
N-Channel
N-Ch
900
VGS = 0V,VDS = 15V,f = 1.0MHz
P-Ch
780
N-Ch
430
P-Channel
P-Ch
470
VGS = 0V,VDS = -15V,f = 1.0MHz
N-Ch
200
P-Ch
240
A
nA
nC
ns
pF
IC
IC
SMD Type
KRF7317
Electrical Characteristics Ta = 25
Parameter
Continuous Source Current
Pulsed Source Current
Body Diode)
Body Diode) *2
ISM
VSD
Reverse Recovery Time
trr
Reverse RecoveryCharge
Qrr
300 s; duty cycle
Min
IS
Diode Forward Voltage
*1 Pulse width
Testconditons
Symbol
Typ
Max
N-Ch
2.5
P-Ch
-2.5
N-Ch
26
P-Ch
N-Ch
0.72
1.0
TJ = 25 , IS = -2.9A, VGS = 0V*3
P-Ch
-0.78
-1.0
TJ = 25 , IF =1.7A,di/dt = 100A/
N-Ch
52
77
s*1 P-Ch
47
71
P-Channel
TJ=25 ,IF =-2.9A,di/dt=-100A/
s*1
A
-21
TJ = 25 , IS = 1.7A, VGS = 0V*3
N-Channel
Unit
N-Ch
58
86
P-Ch
49
73
V
ns
nC
2%.
*2 Repetitive rating; pulse width limited by max. junction temperature.
*3 N-Channel Starting TJ = 25 , L = 12mH RG = 25 , IAS = 4.1A.
P-Channel Starting TJ = 25 , L = 35mH RG = 25 , IAS = -2.9A.
www.kexin.com.cn
3