Transistors IC SMD Type Product specification KRFR9210 TO-252 +0.15 6.50-0.15 +0.2 5.30-0.2 Available in Tape & Reel Unit: mm +0.1 2.30-0.1 +0.15 1.50-0.15 Features +0.8 0.50-0.7 Dynamic dv/dt Rating Repetitive Avalanche Rated 2.3 +0.1 0.60-0.1 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28 1.50-0.1 P-Channel +0.15 0.50-0.15 +0.2 9.70-0.2 Fast Switching 3.80 Surface Mount +0.15 4.60-0.15 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Continuous Drain Current, VGS @ -10V,Tc = 25 ID -1.9 Continuous Drain Current, VGS @ -10V,Tc = 100 ID -1.2 Pulsed Drain Current*1 IDM -7.6 Power Dissipation Tc = 25 PD 25 Power Dissipation (PCB Mount) Ta = 25 PD 2.5 Linear Derating Factor 0.2 Linear Derating Factor (PCB Mount) 0.02 Unit A W W/ Gate-to-Source Voltage VGS 20 Single Pulse Avalanche Energy*3 EAS 300 Avalanche Current *1 IAR -1.9 A Repetitive Avalanche Energy *1 EAR 2.5 mJ Peak Diode Recovery dv/dt *2 dv/dt -5 V/ns TJ,TSTG -55 to + 150 Operating Junction and Storage Temperature Range V mJ Junction-to-Case R JC 5 /W Junction-to-Ambient R JA 50 /W Junction-to-Ambient R JA 110 /W *1 Repetitive rating; pulse width limited by max. junction temperature. *2 ISD -1.9A, di/dt 70A/ s, VDD V(BR)DSS,TJ 150 *3 VDD=-50V,Starting TJ = 25 , L = 124 mH,RG = 25 , IAS = -1.9A. http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors IC SMD Type Product specification KRFR9210 Electrical Characteristics Ta = 25 Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Testconditons VGS = 0V, ID =- 250 A Min V(BR)DSS/ Static Drain-to-Source On-Resistance RDS(on) VGS = -10V, ID = -1.1A*1 Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250 A -2.0 gfs VDS = -50V, ID = -1.1A*1 0.98 Drain-to-Source Leakage Current IDSS Gate-to-Source Forward Leakage IGSS Gate-to-Source Reverse Leakage Max V -0.23 TJ ID = -1mA,Reference to 25 V/ 3.0 -4.0 -100 VDS = -200V, VGS = 0V, TJ = 150 -500 VGS = 20V -100 VGS = -20V 100 Qg ID = -1.3A 8.9 Gate-to-Source Charge Qgs VDS = -160V 2.1 Gate-to-Drain ("Miller") Charge Qgd VGS = -10V,*1 Turn-On Delay Time td(on) VDD = -100V 8.0 ID = -2.3A 12 RG =24 11 RD =41 *1 13 tr Turn-Off Delay Time td(off) V S VDS = -200V, VGS = 0V Total Gate Charge Rise Time Unit -200 Breakdown Voltage Temp. Coefficient Forward Transconductance Typ A nA nC 3.9 ns Fall Time tf Internal Drain Inductance LD 4.5 nH Internal Source Inductance LS 7.5 nH Input Capacitance Ciss VGS = 0V 170 Output Capacitance Coss VDS = -25V 54 Reverse Transfer Capacitance Crss f = 1.0MHz 16 Continuous Source Current Body Diode) pF IS -1.9 ISM -7.6 A Pulsed Source Current Body Diode) *2 Diode Forward Voltage VSD TJ = 25 , IS = -1.9A, VGS = 0V*1 -5.8 V ns Reverse Recovery Time trr TJ = 25 , IF = -2.3A 110 220 Reverse RecoveryCharge Qrr di/dt = 100A/ 0.56 1.1 Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) *1 Pulse width 300 s; duty cycle s*1 C 2%. *2 Repetitive rating; pulse width limited bymax http://www.twtysemi.com [email protected] 4008-318-123 2 of 2