IC
IC
SMD Type
HEXFET Power MOSFET
KRF7706
TSSOP-8
Unit: mm
Features
Ultra Low On-Resistance
P-Channel MOSFET
Very Small SOIC Package
Low Profile (
1.2mm)
1,5,8: Drain
Available in Tape & Reel
2,3,6,7: Source
4: Gate
Absolute Maximum Ratings Ta = 25
Parameter
Drain- Source Voltage
Symbol
Rating
Unit
V
VDS
-30
Continuous Drain Current, VGS @ -10V @ Ta = 25
ID
-7
Continuous Drain Current, VGS @ -10V @ Ta = 70
ID
-5.7
Pulsed Drain Current *1
A
IDM
-28
Power Dissipation *2
@Ta= 25
PD
1.51
W
Power Dissipation *2
@Ta = 70
PD
0.96
W
0.01
W/
20
V
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Maximum Junction-to-Ambient *2
VGS
TJ, TSTG
R
JA
-55 to + 150
83
/W
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 Surface mounted on 1 in square Cu board
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1
IC
IC
SMD Type
KRF7706
Electrical Characteristics Ta = 25
Parameter
Symbol
Drain-to-Source Breakdown Voltage
V(BR)DSS
Breakdown Voltage Temp. Coefficient
V(BR)DSS/
Static Drain-to-Source On-Resistance
RDS(on)
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
VGS = 0V, ID = -250 A
Min
22
36
m
gfs
VDS = -10V, ID = -7.0A*1
6.9
-2.5
VDS = -24V, VGS = 0V
-15
VDS = -24V, VGS = 0V, TJ = 70
-25
VGS = -20V
-100
VGS = 20V
100
Qg
ID = -7.0A
48
Qgs
VDS = -15V
8.5
Gate-to-Drain ("Miller") Charge
Qgd
VGS = -10V
8.4
Turn-On Delay Time
td(on)
VDD = -15V,VGS=-10V
17
ID = -1.0A
46
td(off)
RG = 6
244
tf
Turn-Off Delay Time
RD=15
122
Input Capacitance
Ciss
VGS = 0V
2211
Output Capacitance
Coss
VDS = -25V
339
Reverse Transfer Capacitance
Crss
f = 1.0MHz
207
Fall Time
Continuous Source Current
Body Diode)
V
S
Total Gate Charge
tr
V/
VGS = -10V, ID = -7.0A*1
Gate-to-Source Charge
Rise Time
Unit
V
VGS = -4.5V, ID = -5.6A*1
-1.0
Gate-to-Source Reverse Leakage
Max
0.015
TJ ID = -1mA,Reference to 25
VDS = VGS, ID = -250 A
IGSS
Typ
-30
VGS(th)
IDSS
Drain-to-Source Leakage Current
Testconditons
A
nA
72
nC
ns
pF
IS
-1.5
ISM
-28
A
Pulsed Source Current
Body Diode) *2
Diode Forward Voltage
VSD
Reverse Recovery Time
trr
TJ = 25 , IF =-1.5A
Reverse RecoveryCharge
Qrr
di/dt = -100A/
*1 Pulse width
300 s; duty cycle
2%.
*2 Repetitive rating; pulse width limited by max. junction temperature.
2
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-1.2
V
34
51
ns
32
48
TJ = 25 , IS = -1.5A, VGS = 0V*1
s*1
C