IC
IC
SMD Type
HEXFET Power MOSFET
KRF7501
Features
Generation V Technology
Ulrtra Low On-Resistance
Dual N-Channel MOSFET
Very Small SOIC Package
Low Profile ( 1.1mm)
Available in Tape & Reel
Fast Switching
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
A
VDS
20
Continuous Drain Current, VGS @ 10V,Ta = 25
ID
2.4
Continuous Drain Current, VGS @ 10V,TA = 70
ID
1.9
Pulsed Drain Current*1
Drain-Source Voltage
A
IDM
19
Power Dissipation Ta = 25
*1
PD
1.25
W
Power Dissipation Ta = 70
*1
PD
0.8
W
Linear Derating Factor
0.01
Gate-to-Source Voltage Single Pulse tp 10 s
VGSM
Gate-to-Source Voltage
VGS
Peak Diode Recovery dv/dt*1
Junction and Storage Temperature Range
Junction-to-Ambient *2
* ISD
1.7A, di/dt
66A/
s, VDD
*2 Surface mounted on FR-4 board, t
V(BR)DSS,TJ
16
12
dv/dt
5
TJ, TSTG
-55 to + 150
R JA
100
W/
V
V
V/ns
/W
150
10sec.
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1
IC
IC
SMD Type
KRF7501
Electrical Characteristics Ta = 25
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Testconditons
V(BR)DSS
Breakdown Voltage Temp. Coefficient
V(BR)DSS/
Static Drain-to-Source On-Resistance
RDS(on)
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
TJ
Typ
Max
20
V
0.041
ID = 1mA,Reference to 25
V/
VGS = 4.5V, ID = 1.7A*1
0.085 0.135
VGS = 2.7V, ID =0.85A*1
0.120
0.20
VDS = VGS, ID = 250 A
0.70
V
gfs
VDS = 10V, ID = 0.85A*1
2.6
S
IGSS
Gate-to-Source Reverse Leakage
VDS = 16V, VGS = 0V
1.0
VDS = 16V, VGS = 0V, TJ = 125
25
VGS = 12V
-100
VGS = -12V
100
Total Gate Charge
Qg
ID = 1.7A
5.3
8.0
Gate-to-Source Charge
Qgs
VDS = 16V
0.84
1.3
Gate-to-Drain ("Miller") Charge
Qgd
VGS = 4.5V,*1
2.2
3.3
Turn-On Delay Time
td(on)
VDD = 10V
5.7
tr
ID = 1.7A
24
td(off)
RG =6.0
15
tf
RD = 5.7
16
Input Capacitance
Ciss
VGS = 0V
260
Output Capacitance
Coss
VDS = 15V
130
Reverse Transfer Capacitance
Crss
f = 1.0MHz
61
Rise Time
Turn-Off Delay Time
Fall Time
Continuous Source Current
Body Diode)
Unit
VGS(th)
IDSS
Drain-to-Source Leakage Current
VGS = 0V, ID = 250 A
Min
A
nA
nC
ns
pF
IS
1.25
ISM
19
A
Pulsed Source Current
Body Diode) *2
Diode Forward Voltage
VSD
Reverse Recovery Time
trr
TJ = 25 , IF = 1.7A.VR=10V
Reverse RecoveryCharge
Qrr
di/dt = 100A/
*1 Pulse width
300 s; duty cycle
2%.
*2 Repetitive rating; pulse width limited bymax
2
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1.2
V
39
59
ns
37
56
nC
TJ = 25 , IS = 1.7A, VGS = 0V*1
s*1