IC IC SMD Type Product specification KRF7756 TSSOP-8 Features Unit: mm Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile ( 1.2mm) Available in Tape & Reel 1,5,8: Drain 2,3,6,7: Source 4: Gate Absolute Maximum Ratings Ta = 25 Parameter Drain- Source Voltage Symbol Rating Unit VDS -12 V Continuous Drain Current, VGS @ -4.5V @ TA = 25 ID -4.3 Continuous Drain Current, VGS @ -4.5V @ TA = 70 ID -3.5 Pulsed Drain Current *1 IDM -17 A Power Dissipation *2 @TA= 25 PD 1.0 W Power Dissipation *2 @TA = 70 PD 0.64 W Linear Derating Factor 8 Gate-to-Source Voltage VGS Junction and Storage Temperature Range Maximum Junction-to-Ambient *2 TJ, TSTG R JA 8 m W/ V -55 to + 150 125 /W *1 Repetitive rating; pulse width limited by max. junction temperature. *2 Surface mounted on FR-4 board, http://www.twtysemi.com 10sec [email protected] 4008-318-123 1 of 2 IC IC SMD Type Product specification KRF7756 Electrical Characteristics Ta = 25 Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Breakdown Voltage Temp. Coefficient V(BR)DSS/ Static Drain-to-Source On-Resistance RDS(on) Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current VGS = 0V, ID = -250 A Min V/ 0.040 VGS = -2.5V, ID = -3.4A*1 0.058 VGS = -1.8V, ID = -2.2A*1 0.087 gfs VDS = -10V, ID = -4.3A*1 13 -0.9 VDS = -9.6V, VGS = 0V -1.0 VDS = -9.6V, VGS = 0V, TJ = 70 -25 VGS = -8.0V -100 VGS = 8.0V 100 Qg ID = -4.3A 12 18 Gate-to-Source Charge Qgs VDS = -6.0V 1.8 2.7 Gate-to-Drain ("Miller") Charge Qgd VGS = -4.5V 2.9 4.4 Turn-On Delay Time td(on) VDD = -6V 12 tr ID = -1.0A 18 RD = 6 160 VGS = -4.5V 170 Turn-Off Delay Time td(off) Fall Time tf Input Capacitance Ciss VGS = 0V 1400 Output Capacitance Coss VDS = -10V 310 Reverse Transfer Capacitance Crss f = 1.0MHz 240 Continuous Source Current Body Diode) V S Total Gate Charge Rise Time Unit V VGS = -4.5V, ID = -4.3A*1 -0.4 Gate-to-Source Reverse Leakage Max -0.006 TJ ID = -1mA,Reference to 25 VDS = VGS, ID = -250 A IGSS Typ -12 VGS(th) IDSS Gate-to-Source Forward Leakage Testconditons A nA nC ns pF IS -1.0 ISM -17 A Pulsed Source Current Body Diode) *2 Diode Forward Voltage VSD Reverse Recovery Time trr Reverse RecoveryCharge Qrr *1 Pulse width 400 s; duty cycle -1.2 TJ = 25 , IS = -1.0A, VGS = 0V*1 V TJ = 25 , IF =-1.0A 35 53 ns di/dt = -100A/ 20 30 nC s*1 2%. *2 Repetitive rating; pulse width limited by max. junction temperature. http://www.twtysemi.com [email protected] 4008-318-123 2 of 2