IC
IC
SMD Type
HEXFET Power MOSFET
KRF7301
Features
Generation V Technology
Ultra Low On-Resistance
Dual N-Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
10 Sec. Pulsed Drain Current, VGS @ 4.5V,Ta = 25
ID
5.7
Continuous Drain Current, VGS @ 4.5V,Ta = 25
ID
5.2
Continuous Drain Current, VGS @ 4.5V,TC = 70
ID
4.1
Pulsed Drain Current*1
IDM
21
Power Dissipation Ta = 25
PD
Linear Derating Factor
Gate-to-Source Voltage
VGS
Peak Diode Recovery dv/dt*2
2
Unit
A
W
0.016
W/
12
V
dv/dt
5
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 to + 150
Maximum Junction-to-Ambient *3
R JA
62.5
V/ns
/W
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 ISD
2.6A, di/dt
100A/
s, VDD V(BR)DSS,TJ
*3 Surface mounted on FR-4 board, t
150
10sec.
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1
IC
IC
SMD Type
KRF7301
Electrical Characteristics Ta = 25
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Testconditons
VGS = 0V, ID = 250A
V(BR)DSS
Breakdown Voltage Temp. Coefficient
V(BR)DSS/
Static Drain-to-Source On-Resistance
RDS(on)
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Typ
Max
20
V
0.044
ID = 1mA,Reference to 25
V/
VGS = 4.5V, ID = 2.6A*1
0.050
VGS = 2.7V, ID = 2.2A*1
0.070
VDS = VGS, ID = 250 A
0.70
V
gfs
VDS = 15V, ID = 2.6A*1
8.3
S
IGSS
Gate-to-Source Reverse Leakage
VDS = 16V, VGS = 0V
1.0
VDS = 16V, VGS = 0V, TJ = 125
25
VGS = 12V
100
VGS = -12V
-100
Qg
ID = 2.6A
Gate-to-Source Charge
Qgs
VDS = 16V
2.2
Gate-to-Drain ("Miller") Charge
Qgd
VGS = 4.5V,*1
8.0
Turn-On Delay Time
td(on)
VDD = 10V
Total Gate Charge
A
nA
20
nC
9.0
tr
ID = 2.6A
42
td(off)
RG = 6.0
32
Fall Time
tf
RD = 3.8
Intermal Drain Inductance
LD
4.0
Internal Source Inductance
LS
6.0
Input Capacitance
Ciss
VGS = 0V
660
Output Capacitance
Coss
VDS = 15V
280
Reverse Transfer Capacitance
Crss
f = 1.0MHz
140
Rise Time
Turn-Off Delay Time
Unit
VGS(th)
IDSS
Drain-to-Source Leakage Current
TJ
Min
ns
51
*1
nH
Continuous Source Current
Body Diode)
pF
IS
2.5
ISM
21
A
Pulsed Source Current
Body Diode) *2
V
29
44
ns
22
33
VSD
Reverse Recovery Time
trr
TJ = 25 , IF =2.6A
Reverse RecoveryCharge
Qrr
di/dt = 100A/
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
*1 Pulse width
300 s; duty cycle
2%.
*2 Repetitive rating; pulse width limited bymax
2
1.0
Diode Forward Voltage
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TJ = 25 , IS = 1.8A, VGS = 0V*1
s*1
C