IC
IC
SMD Type
HEXFET Power MOSFET
KRF7503
Features
Generation V Technology
Ulrtra Low On-Resistance
Dual N-Channel MOSFET
Very Small SOIC Package
Low Profile ( 1.1mm)
Available in Tape & Reel
Fast Switching
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
ID
2.4
Continuous Drain Current, VGS @ 10V,TA = 70
ID
1.9
Pulsed Drain Current*1
IDM
14
PD
1.25
Continuous Drain Current, VGS @ 10V,Ta = 25
Power Dissipation Ta = 25
*1
Linear Derating Factor
10
Gate-to-Source Voltage
VGS
12
Peak Diode Recovery dv/dt*1
dv/dt
5
TJ, TSTG
-55 to + 150
R JA
100
Junction and Storage Temperature Range
Junction-to-Ambient *2
* ISD
1.7A, di/dt
120A/
s, VDD
*2 Surface mounted on FR-4 board, t
V(BR)DSS,TJ
Unit
A
W
mW/
V
V/ns
/W
150
10sec.
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1
IC
IC
SMD Type
KRF7503
Electrical Characteristics Ta = 25
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Testconditons
V(BR)DSS
Breakdown Voltage Temp. Coefficient
V(BR)DSS/
Static Drain-to-Source On-Resistance
RDS(on)
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
TJ
Typ
Max
30
V
0.059
ID = 1mA,Reference to 25
V/
VGS = 10V, ID = 1.7A*1
0.135
VGS = 4.5V, ID =0.85A*1
0.222
VDS = VGS, ID = 250 A
1.0
V
gfs
VDS = 10V, ID = 0.85A*1
1.9
S
IGSS
Gate-to-Source Reverse Leakage
VDS = 24V, VGS = 0V
1.0
VDS = 24V, VGS = 0V, TJ = 125
25
VGS = -20V
-100
VGS = 20V
100
Total Gate Charge
Qg
ID = 1.7A
7.8
12
Gate-to-Source Charge
Qgs
VDS = 24V
1.2
1.8
Gate-to-Drain ("Miller") Charge
Qgd
VGS = 10V,*1
2.5
3.8
Turn-On Delay Time
td(on)
VDD = 15V
4.7
tr
ID = 1.7A
10
td(off)
RG =6.0
12
tf
RD = 8.7
5.3
Input Capacitance
Ciss
VGS = 0V
210
Output Capacitance
Coss
VDS = 25V
80
Reverse Transfer Capacitance
Crss
f = 1.0MHz
32
Rise Time
Turn-Off Delay Time
Fall Time
Continuous Source Current
Body Diode)
Unit
VGS(th)
IDSS
Drain-to-Source Leakage Current
VGS = 0V, ID = 250 A
Min
A
nA
nC
ns
pF
IS
1.25
ISM
14
A
Pulsed Source Current
Body Diode) *2
Diode Forward Voltage
VSD
Reverse Recovery Time
trr
TJ = 25 , IF = 1.7A.VR=10V
Reverse RecoveryCharge
Qrr
di/dt = 100A/
*1 Pulse width
300µs; duty cycle
2%.
*2 Repetitive rating; pulse width limited bymax
2
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1.2
V
40
60
ns
48
72
nC
TJ = 25 , IS = 1.7A, VGS = 0V*1
s*1