MOSFET SMD Type MOS Field Effect Transistor 2SJ607 TO-263 +0.1 1.27-0.1 RDS(on)2 = 16 m MAX. (VGS = -4.0 V, ID =-42 A) 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low Ciss: Ciss = 7500 pF TYP. 5.60 MAX. (VGS =-10 V, ID = -42A) Built-in gate protection diode +0.2 4.57-0.2 +0.2 2.54-0.2 +0.1 0.81-0.1 2.54 5.08 +0.2 15.25-0.2 RDS(on)1 =11 m +0.2 8.7-0.2 Low on-resistance +0.1 1.27-0.1 +0.2 2.54-0.2 Features Unit: mm +0.2 0.4-0.2 +0.1 -0.1 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VDSS -60 V Gate to source voltage VGSS 20 V ID 83 A Drain current (DC) Drain current(pulse) * Power dissipation ID 332 PD 160 W TA=25 PD 1.5 W Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW 10 A TC=25 s, duty cycle 1% www.kexin.com.cn 1 MOSFET SMD Type 2SJ607 Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Testconditons IDSS VDS=-60V,VGS=0 IGSS VGS= RDS(on) Typ 20V,VDS=0 VGS(off) VDS=-10V,ID=-1mA Yfs Min VDS=-10V,ID=-42A Max Unit -10 A 10 -1.5 -2.0 45 90 -2.5 A V S VGS=-10V,ID=-42A 9.1 11 m VGS=-4.0V,ID=-42A 11 16 m Ciss VDS=-10V,VGS=0,f=1MHZ 7500 pF Output capacitance Coss 1800 pF Reverse transfer capacitance Crss 430 pF Turn-on delay time td(on) 23 ns Rise time Turn-off delay time Fall time 16 ns td(off) 340 ns tf 160 ns tr VGS(on)=-30V,ID=--42A ,VDD=-10V,RG=0 Total Gate Charge QG ID = -83A 188 nC Gate to Source Charge QGS VDD= -48 V 30 nC Gate to Drain Charge QGD VGS =-10 V 48 nC VF(S-D) IF = 83A, VGS = 0 V 1.0 V Reverse Recovery Time trr IF = 83 A, VGS = 0 V 64 ns Reverse Recovery Charge Qrr di/dt = 100 A / 150 nC Body Diode Forward Voltage 2 Symbol www.kexin.com.cn s