IC IC SMD Type Product specification KTD2017 TSSOP-8 Unit: mm Features Low ON resistance. 2.5V drive. Mounting height 1.1mm Composite type, facilitating high-density mounting. 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-to-Source Voltage VDSS 20 V Gate-to-Source Voltage VGSS Drain Current(DC) ID 10 V 5 A IDP 20 A Allowable Power Dissipation PD 0.8 W Total Dissipation PT 1.3 W Drain Current (pulse) (PW 10ìs) Channel Temperature Tch 150 Storage Temperature Tstg -55 to +150 http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 IC IC SMD Type Product specification KTD2017 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons V(BR)DSS ID=1mA, VGS=0 Drain-to Source Breakdown Voltage Min Typ Max 20 Unit V Drain Cut-off Current IDSS VDS = 20 V, VGS = 0 V 1 A Gate Leakage Current IGSS VGS = 10 A 8 V, VDS = 0 V VGS(off) VDS = 10 V, ID = 1 mA Gate Cut-off Voltage Forward Transfer Admittance Yfs Static Drain to Source On-state Resistance VDS = 10 V, ID = 5 A RDS(on)1 VGS = 4 V, ID = 4 A RDS(on)2 VGS = 2.5 V, ID = 2 A Input Capacitance 0.4 11.2 1.3 16 V S 17 23 m 20 29 m Ciss VDS = 10 V,f = 1 MHz 1500 pF Output Capacitance Coss VDS = 10 V,f = 1 MHz 350 pF Reverse Transfer Capacitance Crss VDS = 10 V,f = 1 MHz 230 pF Turn-on Delay Time td(on) 19 ns Rise Time Turn-off Delay Time Fall Time 190 ns td(off) 90 ns tf 160 ns 42 nC 4 nC 8 nC tr Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Diode Forward Voltage VSD See Specified Test Circuit VDS= 10 V,VGS = 10 V,ID = 5 A IF = 5 A, VGS = 0 V 0.8 1.2 V Switching Time Test Circuit http://www.twtysemi.com [email protected] 4008-318-123 2 of 2