MOSFET SMD Type N-Channel Silicon MOSFET 2SK2859 Features Low On resistance. Ultrahigh-speed switching. 4V drive. 1 : No Contact 2 : Source 3 : No Contact 4 : Gate 5-8 : Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VDSS 100 V Gate to source voltage VGSS Drain current 15 V ID 2 A Idp * 8 A W Power dissipation PD 1.6 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Symbol Testconditons VDSS ID=1mA,VGS=0 Drain cut-off current IDSS VDS=100V,VGS=0 Gate leakage current IGSS VGS= 12V,VDS=0 Drain to source breakdown voltage Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance VGS(off) VDS=10V,ID=1mA Yfs RDS(on) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance VDS=10V,ID=2A Min Typ Max 100 V 100 10 1.0 2.5 Unit 2.0 4 A A V S VGS=10V,ID=2A 0.3 0.4 VGS=4V,ID=2A 0.4 0.55 380 pF 80 pF Crss 15 pF Turn-on delay time ton 10 ns Rise time tr 13 ns Turn-off delay time toff 70 ns Fall time Diode forward voltage VDS=20V,VGS=0,f=1MHZ ID=2A,VGS(on)=10V,RL=25 ,VDD=50V tf VSD 30 IS=2A,VGS=0 1 ns 1.2 V www.kexin.com.cn 1