IC MOSFET SMD Type Hight Speed Power Switching 2SJ528S TO-252 Features RDS(on) = 0.17 +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Low on-resistance Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 typ. 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28 1.50-0.1 4V gate drive devices. +0.15 0.50-0.15 +0.2 9.70-0.2 High speed switching 1 Gate 2 Drain +0.15 4.60-0.15 3 Source Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Drain to source voltage Parameter VDSS -60 V Gate to source voltage VGSS 20 V Drain current (DC) ID -7 A Drain current(pulse) * ID -28 A Power dissipation PD 20 W Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW 10 s, duty cycle 1% Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Drain to source breakdown voltage VDSS ID=-10mA,VGS=0 Gate to source breakdown voltage VGSS IG = Drain cut-off current IDSS VDS=-60V,VGS=0 Gate leakage current IGSS VGS= Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance 100 A ,VDS=0 RDS(on) Input capacitance Ciss Output capacitance Coss Typ VDS=-10V,ID=-4A Max -60 V 20 -10 10 -1.0 3.0. -2.0 5.0 A A V S VGS=-10V,ID=-4A 0.17 0.22 VGS=-4.0V,ID=-4A 0.24 0.37 VDS=-10V,VGS=0,f=1MHZ Unit V 16V,VDS=0 VGS(off) VDS=-10V,ID=-1mA Yfs Min 440 pF 220 pF Reverse transfer capacitance Crss 75 pF Turn-on delay time td(on) 10 ns 40 ns td(off) 75 ns tf 65 ns Rise time Turn-off delay time Fall time tr VGS(on)=-10V,ID=--4A ,RL=7.5 www.kexin.com.cn 1