Transistors IC SMD Type Logic level TOPFET KUK130-50DL TO-263 Unit: mm 1 .2 7 -0+ 0.1.1 Features TrenchMOS output stage Current limiting +0.1 1.27-0.1 +0.2 4.57-0.2 Protection latched reset by input 0.1max +0.1 1.27-0.1 Control of output stage and supply of overload protection +0.1 0.81-0.1 2.54 circuits derived from input 2.54 +0.2 -0.2 Low operating input current permits direct drive by +0.1 5.08-0.1 2 .5 4 -0+ 0.2.2 5 .2 8 -0+ 0.2.2 5 V logic compatible input level 1 5 .2 5 -0+ 0.2.2 8 .7 -0+ 0.2.2 Overtemperature protection 5 .6 0 Overload protection +0.2 0.4-0.2 micro-controller Input 11Gate Drain 22Drain Source 33Source ESD protection on all pins Overvoltage clamping for turn off of inductive loads Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit VDS 50 V Continuous drain current VIS = 5 V; Tmb = 25 ID selflimited A Continuous drain current VIS = 5 V; Tmb ID 20 A II -5 to 5 mA IIRM -50 to 50 mA W Continuous drain source voltage 121 Continuous input current Repetitive peak input current *1 Total power dissipation Tmb 25 Storage temperature Continuous junction temperature2 normal operation Case temperature during soldering Electrostatic discharge capacitor voltage *2 *1 ä PD 90 Tstg -55 To 175 Tj 150 Tsold 260 VC 2 kV 0.1, tp = 300 ìs *2 C = 250 pF; R = 1.5 kÙ www.kexin.com.cn 1 Transistors IC SMD Type KUK130-50DL Electrical Characteristics Ta = 25 Max Unit Non-repetitive clamping energy Parameter EDSM IDM = 20 A; VDD 20 V;Tmb 25 350 mJ Repetitive clamping energy EDRM IDM = 20 A; VDD 20 V;Tmb 95 ; f = 250 Hz 45 mJ 35 V 70 V 100 ìA Drain source voltage Drain-source clamping voltage Drain source leakage current Symbol VDS V(CL)DSS IDSS Testconditons 4V VIS Min 0 5.5 V VIS = 0 V;ID = 10 mA 50 VIS = 0 V;IDM = 4 A; tp 50 300 ìs; ä 0.01 Drain current limiting RDS(ON) ID 0.1 VIS 4.4 V; tp 300 ìs; ä VIS 4.4 V; tp 300 ìs;Tmb = 25 10 ìA 52 mÙ 22 28 mÙ 43 57 A 65 A 75 185 250 W 600 ìs 0.01;IDM = 10 A VDS = 13 V 4.4 V VIS 28.5 5.5 V;-40 device trips if PD > PD(TO) Tmb 150 21 Overload power threshold PD(TO) Characteristic time TDSC 200 380 Threshold junction temperature Tj(TO) 150 170 Input threshold voltage VIS(TO) Input supply current Input supply current Protection reset voltage Latch reset time Input clamping voltage IIS IISL VISR tlr V(CL)IS Input series resistance to gate of power MOSFET RIG Turn-on delay time td on VDS = 5 V; ID = 1 mA 0.6 2.4 V VDS = 5 V; ID = 1 mA;Tmb = 25 1.1 1.6 2.1 V normal operation;VIS = 5 V 100 220 400 normal operation;VIS = 4 V 80 195 330 protection latched;VIS = 5 V 200 400 650 protection latched;VIS = 3 V 130 250 430 reset time tr 1.5 2 2.9 V 10 40 100 ìs II = 1.5 mA 5.5 8.5 V 100 ìs II = 1.5 mA;Tmb = 25 33 kÙ 50 50 100 60 120 tf 50 100 Junction to mounting base Rth j-mb 1.25 1.39 Junction to ambient Rth j-a Turn-off delay time Fall time www.kexin.com.cn VIS = 5 V tr td off ìA VIS1 = 5 V, VIS2 < 1 V 25 Rise time 2 V 60 VDS = 40 V VDS = 40 V;Tmb = 25 Drain-source resistance Typ VIS = 0 V minimum footprint FR4 PCB 50 ìs K/W K/W