Transistors IC SMD Type PowerMOS transistor Logic level TOPFET KUK109-50DL TO-263 Features Unit: mm 1 .2 7 -0+ 0.1.1 Vertical power DMOS output stage Low on-state resistance Overload protection against over temperature +0.1 1.27-0.1 +0.2 4.57-0.2 5 V logic compatible input level 5 .2 8 -0+ 0.2.2 Control of power MOSFET and supply of overload protection circuits derived from input Lower operating input current permits direct drive by +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 micro-controller 0.1max +0.1 1.27-0.1 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 Latched overload protectionreset by input 2 .5 4 -0+ 0.2.2 8 .7 -0+ 0.2.2 5 .6 0 Overload protection against short circuit load +0.2 0.4-0.2 Input 11Gate Drain 22Drain Source 33Source ESD protection on input pin Overvoltage clamping for turn off of inductive loads Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Continuous drain source voltage*2 VDS 50 V Continuous input voltage VIS 0 to 6 V Continuous drain current *1 ID 26 A ID 16 A Continuous drain current Tmb 100 ; VIS = 5 V IDRM 100 A Total power dissipation Repetitive peak on-state drain current *1 PD 75 W Storage temperature Tstg -55 to 150 Continuous junction temperature*3 Tj 150 Lead temperature Tsold 250 Protection supply voltage*4 VISP 4 V Protected drain source supply voltage VIS = 5 V VDDP(T) 50 V Protected drain source supply voltage VIS = 5 V VDDP(P) 20 V www.kexin.com.cn 1 Transistors IC SMD Type KUK109-50DL Absolute Maximum Ratings Ta = 25 Parameter Instantaneous overload dissipation Tmb = 25 * 1Tmb 25 Symbol Rating Unit PDSM 1.3 kW ; VIS = 5 V *2 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy. *3 A higher Tj is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates to protect the switch. *4 The input voltage for which the overload protection circuits are functional. Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Max Unit 26 A IDROM VIS = 0 V Non-repetitive clamping energy EDSM Tmb 25 ; IDM = 26 A;V 20 V; 625 mJ Repetitive clamping energy EDRM Tmb 95 ; IDM = 8 A;VDD 20 V; f = 250 Hz 40 mJ 2 kV 70 V 10 mA Repetitive peak clamping current Electrostatic discharge capacitor voltage VC Human body model;C = 250 pF; R = 1.5 kÙ Drain-source clamping voltage V(CL)DSS VIS = 0 V; ID = 10 mA Drain-source clamping voltage V(CL)DSS VIS = 0 V; IDM = 2 A; tp 50 300 ìs;d V 0.01 Zero input voltage drain current IDSS VDS = 12 V; VIS = 0 V Zero input voltage drain current IDSS VDS = 50 V; VIS = 0 V 1 20 mA Zero input voltage drain current IDSS VDS = 40 V; VIS = 0 V; Tj = 125 10 100 mA 45 60 mW Drain-source on-state resistance*1 RDS(ON) VIS = 5 V; IDM = 13 A; tp Overload threshold energy 0.5 300 ìs;d 0.01 EDS(TO) Tmb=25 ;L 10mH;RL=10mÙ;VDD=13V;VIS=5V 0.4 J Response time td sc Tmb=25 ;L 10mH;RL=10mÙ;VDD=13V;VIS=5V 0.8 ms Drain current*2 ID(SC) Tmb=25 ;L 10mH;RL=10mÙ;VDD=13V; VIS=5V 45 A IDM(SC) Tmb=25 ;L 10mH;RL=10mÙ;VIS=5V;VDD=13V 105 A 16 S Peak drain current*3 Threshold junction temperature Forward transconductance Input threshold voltage Input supply current Tj(TO) gfs VIS(TO) IIS VIS = 5 V; from ID 150 1A VDS = 10 V; IDM = 13 A tp 300 ìs;d VDS = 5 V; ID = 1 mA normal operation; VIS = 5 V 0.01 10 1.0 1.5 2.0 V 100 200 350 mA 160 270 mA 2.6 3.5 V 330 650 mA 240 430 mA VIS = 4 V Protection reset voltage*1 Input supply current VISR IISL protection latched; Tj = 25 2.0 T = 150 1.0 VIS = 5 V VIS = 3.5 V Input breakdown voltage V(BR)IS Input series resistance to gate of power MOSFET RIG Turn-on delay time td on Rise time Turn-off delay time Fall time 2 Typ www.kexin.com.cn tr td off tf II = 10 mA 6 V Tj = 25 33 kÙ Tj = 150 50 kÙ VDD = 13 V; VIS = 5 V 17 ìs resistive loadg RL = 2.1Ù 75 ìs VDD = 13 V; VIS = 0 V 60 ìs resistive load RL = 2.1Ù 70 ìs Transistors IC SMD Type KUK109-50DL Electrical Characteristics Ta = 25 Parameter Continuous forward current Forward voltage Symbol IS VSDO Testconditons Tmb Min Typ 25 ; VIS = 0 V IS = 26 A; VIS = 0 V; tp = 300 ìs 1.0 Max Unit 26 A 1.5 V Reverse recovery time trr not applicable Internal drain inductance Ld Measured from upper edge of tab to centre of die 2.5 nH Internal source inductance Ls Measured from source lead soldering point to source bond pad 7.5 nH *1 Continuous input voltage. The specified pulse width is for the drain current. *2 Continuous drain-source supply voltage. Pulsed input voltage. *3 Continuous input voltage. Momentary short circuit load connection. www.kexin.com.cn 3