Transistors IC SMD Type Product specification KUK128-50DL TO-263 Unit: mm 1 .2 7 -0+ 0.1.1 Features TrenchMOS output stage +0.1 1.27-0.1 +0.2 4.57-0.2 Current limiting Protection latched reset by input 5 .2 8 -0+ 0.2.2 5 V logic compatible input level Control of output stage and supply of overload protection circuits derived from input 0.1max +0.1 1.27-0.1 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 Low operating input current permits direct drive by +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 Overtemperature protection 2 .5 4 -0+ 0.2.2 8 .7 -0+ 0.2.2 5 .6 0 Overload protection +0.2 0.4-0.2 Input 11Gate Drain 22Drain Source 33Source micro-controller ESD protection on all pins Overvoltage clamping for turn off of inductive loads Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit VDS 50 V Continuous drain current VIS = 5 V; Tmb = 25 ID selflimited A Continuous drain current VIS = 5 V; Tmb ID 8 A II -5 to 5 mA IIRM -10 to 10 mA PD 40 W Tstg -55 To 175 Continuous drain source voltage 125 Continuous input current Repetitive peak input current tp Total power dissipation Tmb 1 ms 25 Storage temperature Continuous junction temperature normal operation Case temperature during soldering Electrostatic discharge capacitor voltage * Tj 150 Tsold 260 VC 2 kV * C = 250 pF; R = 1.5 kÙ http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors IC SMD Type Product specification KUK128-50DL Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Non-repetitive clamping energy EDSM IDM = 8 A; VDD 20 V;Tmb 25 100 mJ Repetitive clamping energy EDRM IDM = 8 A; VDD 20 V;Tmb 95 ; f = 250 Hz 20 mJ 35 V Drain source voltage Drain-source clamping voltage VDS V(CL)DSS 4V VIS 0 5.5 V VIS = 0 V;ID = 10 mA VIS = 0 V;IDM = 2 A; tp Drain source leakage current IDSS 50 300 ìs; ä 50 0.01 0.1 VDS = 40 V;Tmb = 25 RDS(ON) 4.4 V; tp VIS 4.4V; tp VIS 4 V; tp VIS 4V;tp Drain current limiting ID 60 VDS = 40 V VIS Drain-source resistance V 300 ìs; ä 300 ìs; ä 100 ìA 10 ìA mÙ 100 mÙ 200 mÙ 72 105 mÙ 12 16 A 68 0.01;IDM = 3 A 300ìs;ä 0.01;IDM=3A;Tmb=25 V 190 0.01;IDM = 3 A 300ìs;ä 0.01;IDM=3A;Tmb = 25 70 VDS = 13 V;VIS = 5 V; Tmb = 25 8 VDS = 13 V;4.4 V 6 18 A 5 18 A VDS = 13 V;4 V VIS VIS 5.5 V 5.5 V Overload power threshold PD(TO) 20 55 80 W Characteristic time TDSC 200 350 600 ìs Threshold junction temperature Tj(TO) 150 170 Input threshold voltage VIS(TO) Input supply current Input supply current Protection reset voltage Latch reset time Input clamping voltage IIS IISL VISR tlr V(CL)IS Input series resistance to gate of power MOSFET RIG Turn-on delay time td on Rise time Turn-off delay time Fall time device trips if PD PD(TO); VIS = 5 V;Tmb = 25 VDS = 5 V; ID = 1 mA 0.6 2.4 V VDS = 5 V; ID = 1 mA;Tmb = 25 1.1 1.6 2.1 V normal operation;VIS = 5 V 100 220 400 normal operation;VIS = 4 V 80 195 330 protection latched;VIS = 5 V 200 400 650 protection latched;VIS = 3 V 130 250 430 reset time tr 1.5 2 2.9 V VIS1 = 5 V, VIS2 < 1 V 10 40 100 ìs II = 1.5 mA 5.5 8.5 V 100 ìs II = 1.5 mA;Tmb = 25 33 kÙ 8 20 tr 20 50 td off 25 70 VIS = 5 V VIS = 0 V tf 16 40 Junction to mounting base Rth j-mb 2.5 3.1 Junction to ambient Rth j-a http://www.twtysemi.com ìA minimum footprint FR4 PCB [email protected] 50 4008-318-123 ìs K/W K/W 2 of 2