Transistors IC SMD Type PowerMOS transistor Logic level TOPFET KUK110-50GL TO-263 Unit: mm 1 .2 7 -0+ 0.1.1 Features Vertical power DMOS output stage Low on-state resistance +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 5 V input level Low threshold voltage also allows 5 V control Control of power MOSFET +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 and supply of overload protection circuits derived from input 0.1max +0.1 1.27-0.1 2 .5 4 -0+ 0.2.2 Latched overload protection reset by input 1 5 .2 5 -0+ 0.2.2 8 .7 -0+ 0.2.2 Overload protection against short circuit load 5 .6 0 Overload protection against over temperature +0.1 5.08-0.1 +0.2 0.4-0.2 Input 11Gate Drain 22Drain Source 33Source ESD protection on input pin Overvoltage clamping for turn off of inductive loads Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit VDSS 50 V VIS 6 V Continuous drain current * ID 45 A Continuous drain current Tmb ID 28 A IDRM 180 A W Continuous off-state drain source voltage1 VIS = 0 V Continuous input voltage 100 ; VIS = 5 V Repetitive peak on-state drain current * PD 125 Tstg -55 to 150 Tj 150 Lead temperature Tsold 250 Protection supply voltage3 for valid protection VISP 4 V Protected drain source supply voltage VIS = 5 V VDDP(T) 50 V Protected drain source supply voltage4 VIS = 5 V VDDP(P) 24 V Instantaneous overload dissipation Tmb = 25 °C PDSM 2.1 kW Total power dissipation Tmb 25 Storage temperature Continuous junction temperature2 * Tmb 25 ; VIS = 5 V www.kexin.com.cn 1 Transistors IC SMD Type KUK110-50GL Electrical Characteristics Ta = 25 Parameter Repetitive peak clamping current Testconditons IDROM VIS = 0 V Non-repetitive clamping energy EDSM Tmb Repetitive clamping energy EDRM Electrostatic discharge capacitor voltage VC Tmb 25 ; IDM = 25 A;V Min Typ V(CL)DSS VIS = 0 V; ID = 10 mA V(CL)DSS VIS = 0 V; IDM = 4 A; tp Unit 45 A 1 J 20 V; f = 250 Hz 80 mJ 2 kV 70 V 85 ; IDM = 16 A;VDD Drain-source clamping voltage Max 25 V; inductive load Human body model;C = 250 pF; R = 1.5 kÙ Drain-source clamping voltage 50 300ì s;ä V 0.01 Zero input voltage drain current IDSS VDS = 12 V; VIS = 0 V 0.5 10 ìA Zero input voltage drain current IDSS VDS = 50 V; VIS = 0 V 1 20 ìA IDSS VDS = 40 V; VIS = 0 V; Tj = 125 10 100 ìA 30 35 mÙ Zero input voltage drain current Drain-source on-state resistance RDS(ON) IDM = 25 A; VIS = 5 V;tp Overload threshold energy EDS(TO) Tmb = 25 ; L 10 mH;VDD = 13 V; VIS = 5 V td sc Tmb = 25 ; L 10 mH;VDD = 13 V; VIS = 5 V Response time Threshold junction temperature Tj(TO) VIS = 5 V; from ID Input threshold voltage VIS(TO) VDS = 5 V; ID = 1 mA Input supply current IIS 300 ìs; ä 0.01 2A V 0.2 0.35 mA 2.0 2.6 3.5 V 3.8 10 mA VISR Tj = 150 Input supply current IISL VIS = 5 V; protection latched 2 Input clamp voltage V(BR)IS II = 10 mA 6 VDS = 10 V; IDM = 25 A tp ms 2.0 Protection reset voltage gfs 0.8 1.5 VIS = 5 V; normal operation to gate of power MOSFET J 1.0 VISR RIG 1.1 150 Protection reset voltage Input series resistance 1.0 1.5 kÙ 28 S ID(SC) VDS = 13 V; VIS = 5 V 60 A Turn-on delay time td on VDD = 13 V; VIS = 5 V 2 resistive load RL = 1.1Ù 8 VDD = 13 V; VIS = 0 V 8 resistive load RL = 1.1 Ù 8 Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time tr td off tf td on tr td off 3.7 inductive load IDM = 11 A 3.7 VDD = 13 V; VIS = 0 V 13 1.4 Fall time tf inductive load IDM = 11 A IS Tmb VSDS 0.01 VDD = 13 V; VIS = 5 V Continuous forward current Forward voltage 300 ìs;ä 17 V Drain current1 Forward transconductance 25 ; VIS = 0 V IS = 50 A; VIS = 0 V; tp = 300 ìs 1.0 ìs 50 A 1.5 V Reverse recovery time trr not applicable Internal drain inductance Ld Measured from upper edge of tab to centre of die 2.5 nH Internal source inductance Ls Measured from source lead soldering point to source bond pad 7.5 nH Junction to mounting base Rth j-mb Junction to ambient 2 Symbol www.kexin.com.cn Rth j-a 0.8 minimum footprint FR4 PCB 50 1.0 K/W K/W Transistors IC SMD Type KUK110-50GL Electrical Characteristics Ta = 25 Parameter Continuous forward current Forward voltage Symbol IS VSDO Testconditons Tmb Min Typ 25 ; VIS = 0 V IS = 26 A; VIS = 0 V; tp = 300 ìs 1.0 Max Unit 26 A 1.5 V Reverse recovery time trr not applicable Internal drain inductance Ld Measured from upper edge of tab to centre of die 2.5 nH Internal source inductance Ls Measured from source lead soldering point to source bond pad 7.5 nH *1 Continuous input voltage. The specified pulse width is for the drain current. *2 Continuous drain-source supply voltage. Pulsed input voltage. *3 Continuous input voltage. Momentary short circuit load connection. www.kexin.com.cn 3