Transistors IC SMD Type TrenchPLUS standard level FET KUK7107-55AIE 1 .2 7 -0+ 0.1.1 TO-263 Features Integrated temperature sensor Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 1 5 .2 5 -0+ 0.2.2 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 Standard level compatible 2 .5 4 -0+ 0.2.2 8 .7 -0+ 0.2.2 Q101 compliant 5 .6 0 ESD protection +0.1 5.08-0.1 +0.2 0.4-0.2 gate 11Gate drain 22Drain source 33Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit VDS 55 V Drain-gate voltage IDG = 250 ìA VDGR 55 V Gate-source voltage VGS Drain-source voltage 20 V Drain current (DC) Tmb = 25 ,VGS = 10 V ID 140 A Drain current (DC) Tmb = 100 ,VGS = 10 V ID 75 A peak drain current *1 IDM 560 A Total power dissipation Tmb = 25 Ptot 272 W 10 mA 50 mA gate-source clamping current (continuous) IGS(CL) gate-source clamping current *3 Storage & operating temperature reverse drain current (DC) Tmb = 25 Tstg, Tj IDR -55 to 175 140 A 75 A IDRM 560 A EDS(AL)S 460 J Vesd 6 KV Thermal resistance junction to mounting base Rth j-mb 0.55 K/W Thermal resistance junction to ambient Rth j-a 50 K/W pulsed reverse drain current *1 non-repetitive avalanche energy *2 electrostatic discharge voltage; all pins *4 * 1 Tmb = 25 ; pulsed; tp 10 ìs; *2 unclamped inductive load; ID = 68 A;VDS *3 tp = 5 ms; 55 V; VGS = 10 V; RGS = 50Ù;starting Tj = 25 = 0.01 *4 Human Body Model; C = 100 pF; R = 1.5 k www.kexin.com.cn 1 Transistors IC SMD Type KUK7107-55AIE Electrical Characteristics Ta = 25 Parameter drain-source breakdown voltage gate-source threshold voltage Symbol V(BR)DSS VGS(th) Testconditons Min Typ IDSS 55 V ID = 0.25 mA; VGS = 0 V;Tj = -55 50 V ID = 1 mA; VDS = VGS;Tj = 25 2 ID = 1 mA; VDS = VGS;Tj = 175 1 3 gate-source leakage current drain-source on-state resistance V(BR)GSS 4.4 0.1 VDS = 55 V; VGS = 0 V;Tj = 25 IGSS RDSon IG = 1 mA;-55 Tj 175 VGS = 10 V; VDS = 0 V;Tj = 25 VGS = 10 V; VDS = 0 V;Tj = 175 VGS = 10 V; ID = 50 A;Tj = 25 ratio of drain current to sense current gate-to-source charge VGS > 10 V;-55 Tj 175 Qg(tot) Qgs VGS = 10 V; VDD = 44 V;ID = 25 A V 10 A 20 22 22 A V 1000 nA 10 . 5.8 450 500 A 7 m 14 m 550 116 nC 19 nC gate-to-drain (Miller) charge Qgd 50 nC input capacitance Ciss 4500 pF output capacitance Coss 960 pF reverse transfer capacitance Crss 510 pF turn-on delay time td(on) 36 ns tr 115 ns 159 ns 111 ns rise time turn-off delay time td(off) VGS = 0 V; VDS = 25 V;f = 1 MHz VDD = 30 V; RL = 1.2 ;VGS = 10 V; RG = 10 fall time tf internal drain inductance Ld measured from upper edge of drain mounting base to center of die 2.5 nH internal source inductance Ls measured from source lead to source bond pad 7.5 nH Is = 25A; VGS = 0 V 0.85 source-drain (diode forward) voltage 2 ID/Isense V 250 VGS = 10 V; ID = 50 A;Tj = 175 total gate charge 4 V VDS = 55 V; VGS = 0 V;Tj = 175 gate-source breakdown voltage Unit ID = 0.25 mA; VGS = 0 V;Tj = 25 ID = 1 mA; VDS = VGS;Tj = -55 Zero gate voltage drain current Max VSD 1.2 V reverse recovery time trr IS = 20 A; dIF/dt = -100 A/ìs; 80 ns recovered charge Qr VGS = -10 V; VDS = 30 V 200 nC www.kexin.com.cn