APTM100A23STG Phase leg Series & parallel diodes MOSFET Power Module Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies NTC2 V BUS Q1 Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration G1 OUT S1 Q2 G2 0/VBUS S2 NTC1 Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant S1 S2 NTC2 G1 G2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 1000 36 27 144 ±30 270 694 18 50 2500 Unit V A V mΩ W A July, 2006 OUT mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–7 APTM100A23STG – Rev 3 OUT VBUS 0/VBUS VDSS = 1000V RDSon = 230mΩ typ @ Tj = 25°C ID = 36A @ Tc = 25°C APTM100A23STG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Min Tj = 25°C VGS = 0V,VDS= 800V Tj = 125°C VGS = 10V, ID = 18A VGS = VDS, ID = 5mA VGS = ±30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 500V ID = 36A IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Typ 8700 1430 240 308 mΩ V nA pF nC 35 2092 µJ 760 µJ 902 Min 200 Tj = 25°C Tj = 125°C Tc = 85°C ns 121 Inductive switching @ 125°C VGS = 15V, VBus = 667V ID = 36A, R G = 2.5Ω www.microsemi.com Unit 12 1278 IF = 60A VR = 133V di/dt = 400A/µs Max µA 10 Inductive switching @ 25°C VGS = 15V, VBus = 667V ID = 36A, R G = 2.5Ω IF = 60A IF = 120A IF = 60A Unit 194 Inductive switching @ 125°C VGS = 15V VBus = 667V ID = 36A R G = 2.5Ω VR=200V Max 200 1000 270 5 ±150 52 Symbol Characteristic Test Conditions VRRM Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current 230 3 Min Series diode ratings and characteristics IRM Typ Typ Max 350 600 Tj = 125°C 60 1.1 1.4 0.9 Tj = 25°C 24 Tj = 125°C 48 Tj = 25°C 66 Tj = 125°C 300 Unit V µA A 1.15 V ns July, 2006 IDSS Test Conditions VGS = 0V,VDS= 1000V nC 2–7 APTM100A23STG – Rev 3 Symbol Characteristic APTM100A23STG Parallel diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VR=1000V IF = 60A IF = 120A IF = 60A IF = 60A VR = 667V di/dt = 400A/µs Min 1000 Tj = 25°C Tj = 125°C Tc = 65°C Tj = 125°C Tj = 25°C 290 Tj = 125°C Tj = 25°C Tj = 125°C 390 1340 4700 Symbol Characteristic VISOL TJ TSTG TC Torque Wt Min RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ Transistor Diode Junction to Case Thermal Resistance To Heatsink M5 2500 -40 -40 -40 2.5 R 25 µA 2.3 V ns nC Max 0.18 0.65 Unit °C/W V Typ 50 3952 Max °C N.m g Unit kΩ K T: Thermistor temperature 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T July, 2006 RT = Min Unit V A 150 125 100 4.7 160 Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K Max 350 600 60 1.9 2.2 1.7 Thermal and package characteristics RthJC Typ www.microsemi.com 3–7 APTM100A23STG – Rev 3 IRM Test Conditions APTM100A23STG SP4 Package outline (dimensions in mm) ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS : www.microsemi.com 4–7 APTM100A23STG – Rev 3 July, 2006 See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com APTM100A23STG Thermal Impedance (°C/W) Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.2 0.18 0.9 0.16 0.7 0.14 0.12 0.5 0.1 0.08 0.3 0.06 Single Pulse 0.04 0.1 0.02 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 160 100 7V V GS=15&8V 80 6.5V 60 6V 40 5.5V 20 VDS > I D(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 140 ID, Drain Current (A) 120 100 80 60 T J=25°C 40 20 5V 0 0 5 10 15 20 25 TJ=125°C 30 0 ID, DC Drain Current (A) 4 5 6 7 8 9 10 VGS =20V 1 0.9 35 30 25 20 15 10 0.8 5 0 0 20 40 60 80 100 ID, Drain Current (A) 25 50 75 100 125 150 TC, Case Temperature (°C) www.microsemi.com July, 2006 RDS(on) Drain to Source ON Resistance VGS=10V 1.1 3 40 Normalized to VGS =10V @ 18A 1.2 2 DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.3 1 VGS, Gate to Source Voltage (V) VDS, Drain to Source Voltage (V) 1.4 T J=-55°C 0 5–7 APTM100A23STG – Rev 3 I D, Drain Current (A) 120 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS =10V ID=18A 2.0 1.5 1.0 0.5 0.0 -50 -25 Threshold Voltage vs Temperature 50 75 100 125 150 Maximum Safe Operating Area 1.1 I D, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 25 1000 1.2 1.0 0.9 0.8 0.7 100µs limited by RDSon 100 1ms Single pulse TJ=150°C TC=25°C 10 10ms 1 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 1 Capacitance vs Drain to Source Voltage Ciss 10000 Coss 1000 Crss 100 10 10 20 30 40 50 VDS, Drain to Source Voltage (V) 14 ID=36A TJ=25°C 12 10 VDS=200V V DS =500V VDS=800V 8 6 4 2 0 0 50 100 150 200 250 300 350 400 Gate Charge (nC) July, 2006 0 10 100 1000 VDS , Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) www.microsemi.com 6–7 APTM100A23STG – Rev 3 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM100A23STG APTM100A23STG Delay Times vs Current Rise and Fall times vs Current 60 160 td(off) VDS=667V RG=2.5Ω TJ=125°C L=100µH 50 120 100 V DS=667V RG =2.5Ω T J=125°C L=100µH 80 60 40 tr and tf (ns) 30 tr 20 40 t d(on) 20 10 0 0 10 20 30 40 50 60 70 80 10 20 30 40 50 60 I D, Drain Current (A) ID, Drain Current (A) 80 5 V DS =667V RG =2.5Ω T J=125°C L=100µH 3 Eon 2 Switching Energy (mJ) Eoff 1 V DS =667V ID=36A T J=125°C L=100µH 4 3 Eoff Eon 2 Eoff 1 0 0 10 20 30 40 50 60 70 80 0 ID, Drain Current (A) 3 5 8 10 13 15 Gate Resistance (Ohms) Operating Frequency vs Drain Current Source to Drain Diode Forward Voltage 1000 250 ZVS 200 ZCS 150 I DR, Reverse Drain Current (A) 300 VDS=667V D=50% RG=2.5Ω T J=125°C T C=75°C 100 Hard switching 50 100 0 14 18 22 26 30 ID, Drain Current (A) 34 TJ=150°C T J=25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) July, 2006 Switching Energy (mJ) 70 Switching Energy vs Gate Resistance Switching Energy vs Current 4 Frequency (kHz) tf Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 7–7 APTM100A23STG – Rev 3 td(on) and td(off) (ns) 140