APTC60HM70SCTG Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C ID = 39A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies VBUS CR3A CR3B Features • Q3 G3 G1 OUT1 OUT2 S1 CR2A Q2 CR4A CR2B CR4B Q4 G2 G4 S2 S4 0/VBUS NTC1 G3 - S3 • Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF • • Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration NTC2 G4 Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated • • OUT2 Benefits • Outstanding performance at high frequency operation OUT1 0/VBUS VBUS • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for S1 NTC2 S2 G1 NTC1 G2 easy PCB mounting • Low profile • RoHS compliant Absolute maximum ratings Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 600 V Tc = 25°C 39 ID Continuous Drain Current A Tc = 80°C 29 IDM Pulsed Drain current 160 VGS Gate - Source Voltage ±20 V RDSon Drain - Source ON Resistance 70 mΩ PD Maximum Power Dissipation Tc = 25°C 250 W IAR Avalanche current (repetitive and non repetitive) 20 A EAR Repetitive Avalanche Energy 1 mJ EAS Single Pulse Avalanche Energy 1800 S3 S4 These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–8 July, 2006 CR1B Q1 APTC60HM70SCTG – Rev 3 CR1A APTC60HM70SCTG All ratings @ Tj = 25°C unless otherwise specified IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V Min VGS = 10V, ID = 39A VGS = VDS, ID = 2.7mA VGS = ±20 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz IF VF trr Reverse Recovery Time Qrr Reverse Recovery Charge Min Typ 7 2.56 0.21 259 IF = 30A IF = 60A IF = 30A IF = 30A VR = 133V di/dt = 200A/µs www.microsemi.com Max Unit µA mΩ V nA nF nC 21 30 84 402 µJ 980 658 µJ 1206 Min 200 Tj = 25°C Tj = 125°C Tc = 85°C ns 283 Inductive switching @ 25°C VGS = 15V, VBus = 400V ID = 39A, R G = 5Ω Inductive switching @ 125°C VGS = 15V, VBus = 400V ID = 39A, R G = 5Ω VR=200V Unit 111 Inductive Switching @ 125°C VGS = 15V VBus = 400V ID = 39A R G = 5Ω DC Forward Current Diode Forward Voltage 3 Max 25 250 70 3.9 ±100 29 Symbol Characteristic Test Conditions VRRM Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current 2.1 VGS = 10V VBus = 300V ID = 39A Series diode ratings and characteristics IRM Typ Tj = 25°C Tj = 125°C Typ Max 250 500 Tj = 125°C 30 1.1 1.4 0.9 Tj = 25°C 24 Tj = 125°C 48 Tj = 25°C 33 Tj = 125°C 150 Unit V µA A 1.15 V July, 2006 Symbol ns nC 2–8 APTC60HM70SCTG – Rev 3 Electrical Characteristics APTC60HM70SCTG Parallel diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IF Maximum Reverse Leakage Current DC Forward Current VF Diode Forward Voltage QC Total Capacitive Charge C Total Capacitance Min 600 400 2000 f = 1MHz, VR = 400V 100 Typ Transistor Series diode Parallel diode RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz To Heatsink M5 2500 -40 -40 -40 2.5 V pF Max 0.5 1.2 1.5 Unit °C/W V Typ 50 3952 Max °C N.m g Unit kΩ K R 25 T: Thermistor temperature 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T July, 2006 RT = Min µA nC 150 125 100 4.7 160 Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K Unit V A 1.8 2.4 28 Min Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight 100 200 20 1.6 2.0 130 Symbol Characteristic VISOL TJ TSTG TC Torque Wt Max Tj = 25°C Tj = 175°C Tc = 125°C Tj = 25°C IF = 20A Tj = 175°C IF = 20A, VR = 300V di/dt =800A/µs f = 1MHz, VR = 200V VR=600V Thermal and package characteristics RthJC Typ www.microsemi.com 3–8 APTC60HM70SCTG – Rev 3 IRM Test Conditions APTC60HM70SCTG SP4 Package outline (dimensions in mm) ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS : www.microsemi.com 4–8 APTC60HM70SCTG – Rev 3 July, 2006 See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com APTC60HM70SCTG Typical CoolMOS Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.6 0.5 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Transfert Characteristics Low Voltage Output Characteristics 140 6.5V 6V 120 5.5V 80 5V 40 4.5V 4V 0 100 80 60 TJ=125°C 40 20 TJ=25°C T J=-55°C 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) 25 0 1.05 VGS=10V VGS=20V 1 7 DC Drain Current vs Case Temperature 45 RDS(on) vs Drain Current 1.1 Normalized to V GS=10V @ 19.5A 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) 0.95 0.9 40 35 30 25 20 15 10 5 0 10 20 30 40 50 60 I D, Drain Current (A) www.microsemi.com 25 50 75 100 125 TC, Case Temperature (°C) 150 July, 2006 0 5–8 APTC60HM70SCTG – Rev 3 RDS(on) Drain to Source ON Resistance I D, Drain Current (A) VGS=15&10V 160 VDS > ID(on)xRDS (on)MAX 250µs pulse test @ < 0.5 duty cycle 120 I D, DC Drain Current (A) ID, Drain Current (A) 200 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) Threshold Voltage vs Temperature Maximum Safe Operating Area 1000 1.1 I D, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 1.2 1.0 0.9 0.8 0.7 100 limited by RDSon 10 0.6 100µs Single pulse TJ=150°C TC=25°C 1 ms 10 ms 1 -50 -25 0 25 50 75 100 125 150 1 Ciss Coss 1000 100 Crss 10 1000 14 ID=39A TJ=25°C 12 10 V DS=120V VDS=300V 8 V DS =480V 6 4 2 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) 0 50 100 150 200 Gate Charge (nC) 250 300 July, 2006 0 100 Gate Charge vs Gate to Source Voltage VGS , Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 10000 10 VDS, Drain to Source Voltage (V) TC, Case Temperature (°C) C, Capacitance (pF) V GS=10V ID= 39A www.microsemi.com 6–8 APTC60HM70SCTG – Rev 3 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTC60HM70SCTG APTC60HM70SCTG Delay Times vs Current 350 td(off) 300 250 VDS=400V RG=5Ω TJ=125°C L=100µH 200 150 100 50 80 60 40 0 10 20 30 40 50 tr 60 0 70 0 10 ID, Drain Current (A) 2 40 50 60 70 Switching Energy vs Gate Resistance E off 1.5 1 Eon 0.5 V DS =400V ID=39A T J=125°C L=100µH 4 3 Eoff 2 E on 1 0 0 10 20 30 40 50 60 ID, Drain Current (A) 70 0 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000 Operating Frequency vs Drain Current I DR, Reverse Drain Current (A) 140 120 ZCS 100 80 VDS=400V D=50% RG=5Ω TJ=125°C TC=75°C 60 40 20 ZVS Hard switching 0 10 15 20 25 30 ID, Drain Current (A) T J=150°C 100 TJ=25°C 10 35 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) July, 2006 5 5 10 15 20 25 30 35 40 45 50 www.microsemi.com 7–8 APTC60HM70SCTG – Rev 3 0 Frequency (kHz) 30 5 Switching Energy (mJ) Switching Energy (mJ) V DS=400V R G=5Ω T J=125°C L=100µH 20 ID, Drain Current (A) Switching Energy vs Current 2.5 tf 20 td(on) 0 VDS=400V RG=5Ω T J=125°C L=100µH 100 tr and t f (ns) td(on) and td(off) (ns) Rise and Fall times vs Current 120 APTC60HM70SCTG Typical SiC Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1.6 0.9 1.4 1.2 0.7 1 0.5 0.8 0.6 0.3 0.4 0.1 0.2 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) 400 TJ=25°C 35 30 T J=75°C 25 IR Reverse Current (µA) I F Forward Current (A) Reverse Characteristics Forward Characteristics 40 T J=175°C 20 TJ=125°C 15 10 5 300 0.5 1 1.5 2 2.5 3 T J=125°C 250 200 T J=75°C 150 100 T J=25°C 50 0 0 T J=175°C 350 3.5 VF Forward Voltage (V) 0 200 300 400 500 600 700 VR Reverse Voltage (V) 800 Capacitance vs.Reverse Voltage 800 C, Capacitance (pF) 700 600 500 400 300 200 100 10 100 VR Reverse Voltage 1000 “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 8–8 APTC60HM70SCTG – Rev 3 1 July, 2006 0