LESHAN RADIO COMPANY, LTD. Noninverting 3−State Buffer L74VHC1G125 The L74VHC1G125 is an advanced high speed CMOS noninverting 3 state buffer fabricated with silicon gate noninverting 3 state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffered 3-state output which provides high noise immunity and stable output. The L74VHC1G125 input structure provides protection when voltages up to 7.0V are applied,regardless of the supply voltage. This allows the L74VHC1G125 to be used to interface 5.0V circuits to 3.0V circuits. Features • • • • • • • High Speed: tPD = 3.5 ns (Typ) at VCC = 5.0 V Low Power Dissipation: ICC = 1 mA (Max) at TA = 25°C Power Down Protection Provided on Inputs Balanced Propagation Delays Pin and Function Compatible with Other Standard Logic Families Chip Complexity: FETs = 58; Equivalent Gates = 15 Pb−Free Packages are Available MARKING DIAGRAMS 5 4 5 1 M 2 3 SC–88A/SOT–353/SC–70 DF SUFFIX W0 M G G OE 1 IN A 2 GND 3 5 VCC 4 OUT Y 1 5 4 Figure 1. Pinout (Top View) 5 1 W0 AYW G G 2 3 TSOP–5/SOT–23/SC–59 DT SUFFIX OE EN OUT Y IN A Figure 2. Logic Symbol 1 FUNCTION TABLE PIN ASSIGNMENT 1 OE 2 IN A 3 GND 4 OUT Y 5 VCC A Input OE Input Y Output L H X L L H L H Z ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. 1/6 LESHAN RADIO COMPANY, LTD. L74VHC1G125 MAXIMUM RATINGS Symbol Characteristics Value Unit VCC DC Supply Voltage −0.5 to +7.0 V VIN DC Input Voltage −0.5 to +7.0 V −0.5 to 7.0 −0.5 to VCC + 0.5 V −20 mA VOUT DC Output Voltage IIK Input Diode Current VCC = 0 High or Low State IOK Output Diode Current +20 mA IOUT DC Output Current, per Pin +25 mA ICC DC Supply Current, VCC and GND +50 mA PD Power Dissipation in Still Air SC−88A, TSOP−5 200 mW qJA Thermal Resistance SC−88A, TSOP−5 333 °C/W TL Lead Temperature, 1 mm from Case for 10 s 260 °C TJ Junction Temperature Under Bias +150 °C Tstg Storage Temperature −65 to +150 °C Human Body Model (Note 1) Machine Model (Note 2) Charged Device Model (Note 3) > 2000 > 200 N/A V Above VCC and Below GND at 125°C (Note 4) $500 mA VESD VOUT < GND; VOUT > VCC ESD Withstand Voltage ILatchup Latchup Performance Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Tested to EIA/JESD22−A114−A. 2. Tested to EIA/JESD22−A115−A. 3. Tested to JESD22−C101−A. 4. Tested to EIA/JESD78. RECOMMENDED OPERATING CONDITIONS Symbol Characteristics Min Max Unit VCC DC Supply Voltage 2.0 5.5 V VIN DC Input Voltage 0.0 5.5 V DC Output Voltage 0.0 VCC V Operating Temperature Range −55 +125 °C 0 0 100 20 ns/V VOUT TA tr , tf VCC = 3.3 V $ 0.3 V VCC = 5.0 V $ 0.5 V Input Rise and Fall Time 47.9 100 178,700 20.4 110 79,600 9.4 120 37,000 4.2 130 17,800 2.0 140 8,900 1.0 TJ = 80° C 117.8 419,300 TJ = 90° C 1,032,200 TJ = 100° C 80 90 FAILURE RATE OF PLASTIC = CERAMIC UNTIL INTERMETALLICS OCCUR TJ = 110° C Time, Years TJ = 120° C Time, Hours TJ = 130° C Junction Temperature °C NORMALIZED FAILURE RATE Device Junction Temperature versus Time to 0.1% Bond Failures 1 1 10 100 1000 TIME, YEARS Figure 3. Failure Rate vs. Time Junction Temperature 2/6 LESHAN RADIO COMPANY, LTD. L74VHC1G125 DC ELECTRICAL CHARACTERISTICS Symbol Parameter Test Conditions Min 1.5 2.1 3.15 3.85 VIH Minimum High−Level Input Voltage 2.0 3.0 4.5 5.5 VIL Maximum Low−Level Input Voltage 2.0 3.0 4.5 5.5 VOH Minimum High−Level Output Voltage VIN = VIH or VIL VIN = VIH or VIL IOH = −50 mA VIN = VIH or VIL IOH = −4 mA IOH = −8 mA VOL Maximum Low−Level Output Voltage VIN = VIH or VIL VIN = VIH or VIL IOL = 50 mA VIN = VIH or VIL IOL = 4 mA IOL = 8 mA TA ≤ 85°C TA = 25°C VCC (V) Typ Max Min 1.5 2.1 3.15 3.85 0.5 0.9 1.35 1.65 2.0 3.0 4.5 1.9 2.9 4.4 3.0 4.5 2.58 3.94 Max 2.0 3.0 4.5 −55 ≤ TA ≤ 125°C Min Max 1.5 2.1 3.15 3.85 0.5 0.9 1.35 1.65 V 0.5 0.9 1.35 1.65 1.9 2.9 4.4 1.9 2.9 4.4 2.48 3.80 2.34 3.66 Unit V V V 2.0 3.0 4.5 0.0 0.0 0.0 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 3.0 4.5 0.36 0.36 0.44 0.44 0.52 0.52 V V IOZ Maximum 3−State Leakage Current VIN = VIH or VIL VOUT = VCC or GND 5.5 ±0.25 $2.5 $2.5 mA IIN Maximum Input Leakage Current VIN = 5.5 V or GND 0 to 5.5 ±0.1 ±1.0 $1.0 mA ICC Maximum Quiescent Supply Current VIN = VCC or GND 5.5 1.0 20 40 mA ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ Î Î ÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎ Î ÎÎ Î ÎÎ Î ÎÎÎÎ ÎÎ Î ÎÎ Î ÎÎÎÎÎ ÎÎ Î ÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ Î ÎÎÎÎÎÎÎÎ ÎÎÎ Î ÎÎ ÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎ Î ÎÎ Î ÎÎ Î ÎÎ Î ÎÎ Î ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ Î ÎÎ ÎÎÎ ÎÎ ÎÎÎ Î Î Î ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ Î ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ Î ÎÎ Î ÎÎ Î ÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎ Î ÎÎ Î ÎÎ Î ÎÎ Î ÎÎ Î ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ Î ÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎ Î Î Î ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ Î ÎÎ Î ÎÎ Î ÎÎ Î ÎÎ Î ÎÎ Î ÎÎ Î ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ Î ÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎ Î Î Î ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ Î ÎÎ ÎÎÎ Î ÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎ Î ÎÎ Î ÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎ Î ÎÎ Î ÎÎ Î ÎÎ Î ÎÎ Î ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎ ÎÎÎ Î ÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ Î ÎÎÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎ Î ÎÎ Î ÎÎ Î ÎÎ Î ÎÎ Î ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎ Î ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ AC ELECTRICAL CHARACTERISTICS Cload = 50 pF, Input tr = tf = 3.0 ns TA ≤ 85°C TA = 25°C Typ Max Max Unit VCC = 3.3 ± 0.3 V CL = 15 pF CL = 50 pF 4.5 6.4 8.0 11.5 9.5 13.0 12.0 16.0 ns VCC = 5.0 ± 0.5 V CL = 15 pF CL = 50 pF 3.5 4.5 5.5 7.5 6.5 8.5 8.5 10.5 Maximum Output Enable Time, Input OE to Y (Figures 4 and 5) VCC = 3.3 ± 0.3 V CL = 15 pF RL = 1000 W CL = 50 pF 4.5 6.4 8.0 11.5 9.5 13.0 11.5 15.0 VCC = 5.0 ± 0.5 V CL = 15 pF RL = 1000 W CL = 50 pF 3.5 4.5 5.1 7.1 6.0 8.0 8.5 10.5 Maximum Output Disable Time, Input OE to Y (Figures 4 and 5) VCC = 3.3 ± 0.3 V CL = 15 pF CL = 50 pF RL 1000 W 6.5 8.0 9.7 13.2 11.5 15.0 14.5 18.0 VCC = 5.0 ± 0.5 V CL = 15 pF RL = 1000 W CL = 50 pF 4.8 7.0 6.8 8.8 8.0 10.0 10.0 12.0 Maximum Input Capacitance 4.0 10 10 10 Maximum 3−State Output Capacitance (Output in High Impedance State) 6.0 Symbol Parameter Test Conditions tPLH, tPHL Maximum Propagation Delay, Input A to Y (Figures 3 and 4) tPZL, tPZH tPLZ, tPHZ CIN COUT Min Min Max −55 ≤ TA ≤ 125°C Min ns ns pF pF Typical @ 25°C, VCC = 5.0 V CPD Power Dissipation Capacitance (Note 5) 8.0 pF 5. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC. CPD is used to determine the no−load dynamic power consumption; PD = CPD VCC2 fin + ICC VCC. 3/6 LESHAN RADIO COMPANY, LTD. L74VHC1G125 SWITCHING WAVEFORMS VCC 50% A OE tPHL tPLH VCC 50% GND tPZL GND tPZH Y VOL + 0.3V tPHZ VOH − 0.3V 50% VCC Y Figure 4. Switching Wave Forms HIGH IMPEDANCE Figure 5. TEST POINT TEST POINT OUTPUT DEVICE UNDER TEST HIGH IMPEDANCE 50% VCC Y 50% VCC tPLZ DEVICE UNDER TEST C L* *Includes all probe and jig capacitance OUTPUT 1 kW CL * CONNECT TO VCC WHEN TESTING tPLZ AND tPZL. CONNECT TO GND WHEN TESTING tPHZ AND tPZH. *Includes all probe and jig capacitance Figure 6. Test Circuit Figure 7. Test Circuit INPUT Figure 8. Input Equivalent Circuit DEVICE ORDERING INFORMATION Device Nomenclature Device Order Number Temp Circuit Device Range Technology Indicator Function Identifier Package Suffix Tape & Reel Suffix L74VHC1G125DFT1 L 74 VHC1G 125 DF T1 L74VHC1G125DFT2 L 74 VHC1G 125 2 DF T2 L74VHC1G125DFT4 L 74 VHC1G 125 2 DF T4 L74VHC1G125DTT1 L 74 VHC1G 125 2 DT T1 L74VHC1G125DTT3 L 74 VHC1G 125 2 DT T3 Package Type (Name/SOT#/ Common Name) Tape and Reel Size SC–70/SC–88A/ SOT–353 SC–70/SC–88A/ SOT–353 SC–70/SC–88A/ SOT–353 SOT–23/TSOPS/ SC–59 178 mm (7 in) 3000 Unit 178 mm (7 in) 3000 Unit 330 mm (13 in) 10,000 Unit 178 mm (7 in) 3000 Unit SOT–23/TSOPS/ SC–59 330 mm (13 in) 10,000 Unit 4/6 LESHAN RADIO COMPANY, LTD. L74VHC1G125 PACKAGE DIMENSIONS SC−88A / SOT−353 / SC70 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419A−01 OBSOLETE. NEW STANDARD 419A−02. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. A G 5 4 −B− S 1 2 DIM A B C D G H J K N S 3 D 5 PL 0.2 (0.008) M B M N INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC −−− 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC −−− 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 J C K H SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm Ǔ ǒinches 5/6 LESHAN RADIO COMPANY, LTD. L74VHC1G125 PACKAGE DIMENSIONS TSOP−5 / SOT23−5 / SC59−5 DT SUFFIX D S 5 4 1 2 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. A AND B DIMENSIONS DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. B L G A DIM A B C D G H J K L M S J C H M K 0.05 (0.002) MILLIMETERS MIN MAX 2.90 3.10 1.30 1.70 0.90 1.10 0.25 0.50 0.85 1.05 0.013 0.100 0.10 0.26 0.20 0.60 1.25 1.55 0_ 10 _ 2.50 3.00 INCHES MIN MAX 0.1142 0.1220 0.0512 0.0669 0.0354 0.0433 0.0098 0.0197 0.0335 0.0413 0.0005 0.0040 0.0040 0.0102 0.0079 0.0236 0.0493 0.0610 0_ 10 _ 0.0985 0.1181 SOLDERING FOOTPRINT* 0.95 0.037 1.9 0.074 2.4 0.094 1.0 0.039 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches 6/6 6