WILLAS General Purpose Transistors MMBT2222LT1 MMBT2222ALT1 NPN Silicon • RoHS product for packing code suffix "G", Halogen free product for packing code suffix "H" . • Weight : 0.008g MAXIMUM RATINGS Rating Symbol 2222 2222A Unit Collector–Emitter Voltage V CEO 30 40 Vdc Collector–Base Voltage V CBO 60 75 Vdc Emitter–Base Voltage V 5.0 6.0 Vdc 600 600 mAdc Collector Current — Continuous EBO IC SOT– 23 3 COLLECTOR THERMAL CHARACTERISTICS 1 BASE Characteristic Symbol Max Unit PD 225 mW RθJA PD 1.8 556 300 mW/°C °C/W mW RθJA 2.4 417 mW/°C °C/W TJ , Tstg –55 to +150 °C Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient 2 EMITTER ORDERING INFORMATION Device Junction and Storage Temperature M1B 3000/Tape & Reel MMBT2222ALT1 1P 3000/Tape & Reel MMBT2222LT1= M1B ; M MBT2222ALT1 = 1 P ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Symbol Min Max Unit Vdc OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage MMBT2222 (I C = 10 mAdc, I B = 0) MMBT2222A Collector–Base Breakdown Voltage MMBT2222 (I C = 10 µAdc, I E = 0) MMBT2222A Emitter–Base Breakdown Voltage MMBT2222 (I E = 10 µAdc, I C = 0) MMBT2222A Collector Cutoff Current MMBT2222A ( V CE = 60 Vdc, I EB(off) = 3.0Vdc) Collector Cutoff Current (V CB = 50 Vdc, I E = 0) MMBT2222 (V CB = 60 Vdc, I E = 0) MMBT2222A (V CB = 50 Vdc, I E = 0, T A = 125°C) MMBT2222 (V CB = 60 Vdc, I E = 0, T A = 125°C) MMBT2222A Emitter Cutoff Current (V EB = 3.0 Vdc, I C = 0) MMBT2222A Base Cutoff Current (V CE = 60 Vdc, V EB(off) = 3.0 Vdc) MMBT2222A 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. V (BR)CEO 30 — 40 –– 60 — Vdc 75 5.0 6.0 — — –– 10 Vdc –– –– –– –– 0.01 0.01 10 10 I EBO — 100 nAdc I BL — 20 nAdc V (BR)CBO V (BR)EBO I CEX nAdc µAdc I CBO Shipping MMBT2222LT1 DEVICE MARKING Characteristic Marking WILLAS MMBT2222LT1 MMBT2222ALT1 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max 35 50 75 35 100 50 30 40 –– –– — — 300 –– –– — –– –– –– –– 0.4 0.3 1.6 1.0 MMBT2222 MMBT2222A MMBT2222 –– 0.6 –– 1.3 1.2 2.6 MMBT2222A –– 2.0 Unit ON CHARACTERISTICS DC Current Gain (I C = 0.1 mAdc, V CE = 10 Vdc) (I C = 1.0 mAdc, V CE = 10 Vdc) (I C = 10 mAdc, V CE = 10 Vdc) (I C = 10 mAdc, V CE = 10 Vdc,T A= –55°C ) (I C = 150 mAdc, V CE = 10 Vdc) (3) (I C = 150 mAdc, V CE = 1.0 Vdc) (3) (I C = 500 mAdc, V CE = 10 Vdc)(3) Collector–Emitter Saturation Voltage(3) (I C = 150 mAdc, I B = 15 mAdc) (I C = 500mAdc, I B = 50 mAdc) Base–Emitter Saturation Voltage (I C = 150 mAdc, I B = 15 mAdc) (I C = 500 mAdc, I B = 50 mAdc) hFE MMBT2222A only MMBT2222 MMBT2222A –– VCE(sat) MMBT2222 MMBT2222A MMBT2222 MMBT2222A Vdc V BE(sat) Vdc SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product(4) MMBT2222 (I C = 20mAdc, V CE= 20Vdc, f = 100MHz) MMBT2222A Output Capacitance(V CB = 10 Vdc, I E = 0, f = 1.0 MHz) Input Capacitance MMBT2222 (V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz) MMBT2222A Input Impedance(V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) MMBT2222A (V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz) MMBT2222A Voltage Feedback Ratio(V CE=10 Vdc, I C= 1.0mAdc, f =1.0kHz) MMBT2222A (V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz) MMBT2222A Small–Signal Current Gain(VCE=10Vdc,I C=1.0mAdc, f=1.0kHz) MMBT2222A (V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz) MMBT2222A Output Admittance(V CE=10 Vdc, I C = 1.0 mAdc,f =1.0 kHz) MMBT2222A (V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz) MMBT2222A Curren Base Time Comstant (V CB= 20 Vdc, I E = 20 mAdc, f = 31.8 MHz) MMBT2222A Noise Figure(VCE=10Vdc, IC=100µAdc, RS=1.0kΩ, f =1.0kHz) MMBT2222A f 250 300 –– –– –– 2.0 0.25 –— 50 75 5.0 25 –– –– 8.0 30 25 8.0 1.25 8.0 4.0 300 375 35 200 rb, C C NF –– –– 150 4.0 T C obo C ibo h ie h re h fe h oe MHz pF pF kΩ X 10 — µmhos ps dB SWITCHING CHARACTERISTICS Delay Time (V CC = 30 Vdc, V EB(off) = – 0.5 Vdc td — 10 Rise Time I C = 150 mAdc, I B1 = 15 mAdc) tr — 25 ns Storage Time (V CC = 30 Vdc, I C = 150 mAdc ts — 225 ns Fall Time I B1 = I B2 = 15 mAdc) tf — 60 3. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%. 4.f T is defined as the frequency at which h fe extrapolates to unity. –4 WILLAS MMBT2222LT1 MMBT2222ALT1 SWITCHING TIME EQUIVALENT TEST CIRCUITS +30 V +30 V 1.0 to 100µs, DUTY CYCLE ~ ~ 2% + 16 V 200 1.0 to 100µs, DUTY CYCLE ~ ~ 2% + 16 V 200 1.0 k 1.0 k 0 0 – 2.0V C S *< 10 pF –14 V C S* < 10 pF < 20 ns <2.0 ns 1N914 – 4.0 V Scope rise time < 4.0ns *Total shunt capacitance of test jig, connectors, and oscilloscope. Figure 1. Turn–On Time Figure 2. Turn–Off Time 1000 h FE , DC CURRENT GAIN 700 500 V CE= 10 V V CE=1.0 V T J = +125°C 300 200 +25°C 100 70 –55°C 50 30 20 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 20 300 500 700 1.0k I C , COLLECTOR CURRENT (mA) V CE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 3. DC Current Gain 1.0 T J = 25°C 0.8 0.6 I C=1.0 mA 0.4 500mA 100mA 10 mA 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 I B , BASE CURRENT (mA) Figure 4. Collector Saturation Region 3.0 5.0 10 20 30 50 WILLAS MMBT2222LT1 200 70 70 t r @V CC= 30V t d@V EB(off) = 2.0V t d@V EB(off) =0 30 20 10 7.0 5.0 t ’s= t s–1/8 t f 30 tf 20 10 7.0 3.0 2.0 5.0 5.0 7.0 10 20 30 50 70 100 200 300 500 5.0 7.0 10 30 50 70 100 200 300 I C , COLLECTOR CURRENT (mA) Figure 5. Turn–On Time Figure 6. Turn - Off Time 500 10 R S = OPTIMUM I C = 1.0 mA, R S = 150 Ω 8 8 NF, NOISE FIGURE (dB) I C = 500 µA, R S = 200 Ω I C = 100 µA, R S = 2.0 kΩ I C = 50 µA, R S = 4.0 kΩ 6 f = 1.0 kHz RS = SOURCE RS = RESISTANCE 4 2 0 0.01 0.02 0.2 0.5 1.0 2.0 5.0 10 20 50 6 4 2 100 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k f , FREQUENCY (kHz) R S, SOURCE RESISTANCE (kΩ) Figure 7. Frequency Effects Figure 8. Source Resistance Effects 30 20 C eb 10 7.0 5.0 C cb 3.0 2.0 0.1 I C=50 µA 100 µA 500 µA 1.0 mA 0 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 f T ,CURRENT– GAIN BANDWIDTH PRODUCT (MHz) NF, NOISE FIGURE (dB) 20 I C , COLLECTOR CURRENT (mA) 10 CAPACITANCE (pF) V CC= 30V I C/ I B= 10 I B1 = I B2 TJ= 25°C 50 t , RISE TIME (ns) 50 t , TIME (ns) 100 I C /I B = 10 TJ= 25°C 100 MMBT2222ALT1 500 V CE = 20 V T J = 25°C 300 200 100 70 50 1.0 2.0 3.0 5.0 7.0 210 20 30 50 70 100 REVERSE VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 9. Capacitance Figure 10. Current– Gain Bandwidth Product WILLAS MMBT2222LT1 10 MMBT2222ALT1 +0.5 T J = 25°C 0 V BE(sat) @ I C /I B =10 COEFFICIENT (mV/ °C) V, VOLTAGE ( VOLTS ) 0.8 1.0 V 0.6 V BE(on) @ V CE =10 V 0.4 0.2 R θVC for V CE(sat) – 0.5 –1.0 –1.5 R θVB for V BE –2.0 V CE(sat) @ I C /I B =10 0 – 2.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 11. “On” Voltages Figure 12. Temperature Coefficients 500 WILLAS MMBT2222LT1 MMBT2222ALT1 SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. A L 3 1 V 2 DIM B S G C D H K J MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 0.0034 0.0140 0.0350 0.0830 0.0177 A B C D G H J K L S V 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm INCHES MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0070 0.0285 0.0401 0.1039 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60