MMBT2907AW

Preliminary Information
General Purpose Transistor
PNP Silicon
MMBT2907AWT1
These transistors are designed for general purpose
mplifier applications. They are housed in the SOT–323/
SC–70 package which is designed for low power surface
3
mount applications.
3
COLLECTOR
1
2
1
BASE
CASE 419–02 , STYLE 3
SOT–323 / SC – 70
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
V CEO
– 60
Vdc
Collector–Base Voltage
V CBO
– 60
Vdc
Emitter–Base Voltage
V EBO
– 5.0
Vdc
IC
– 600
mAdc
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
PD
150
mW
RθJA
833
°C/W
TJ , Tstg
–55 to +150
°C
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBT2907AWT1 = 2F
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
V
(BR)CEO
–60
—
Vdc
V
(BR)CBO
–60
—
Vdc
V
(BR)EBO
–5.0
—
Vdc
I BL
—
– 50
nAdc
I CEX
—
– 50
nAdc
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(2)
(I C = – 10 mAdc, I B = 0)
Collector–Emitter Breakdown Voltage
(I C = – 10 mAdc, I E = 0)
Emitter–Base Breakdown Voltage
(I E = –10µAdc, I C = 0)
Base Cutoff Current
( V CE = –30Vdc, V EB(OFF) = –0.5Vdc )
Collector Cutoff Current
( V CE = –30Vdc, V EB(OFF) = –0.5Vdc )
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
K2–1/2
MMBT2907AWT1
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
75
100
100
100
50
––
––
––
––
––
––
––
–0.4
–1.6
––
––
–1.3
–2.6
200
––
MHz
––
8.0
pF
––
30
pF
—
—
—
—
—
—
45
10
40
80
30
100
ON CHARACTERISTICS
DC Current Gain(1)
(I C =–0.1 mAdc, V CE =–10 Vdc)
(I C = –1.0 mAdc, V CE = –10 Vdc)
(I C = –10 mAdc, V CE = –10 Vdc)
(I C = –150mAdc, V CE = –10Vdc)
(I C = –500mAdc, V CE =–10 Vdc)
Collector–Emitter Saturation Voltage(1)
(I C = –150 mAdc, I B = –15 mAdc)
(I C = –500 mAdc, I B = –50 mAdc)
Base–Emitter Saturation Voltage(1)
(I C = –150 mAdc, I B = –15mAdc)
(I C = –500mAdc, I B = –50mAdc )
hFE
––
VCE(sat)
V
Vdc
Vdc
BE(sat)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product(4)
(I C = –50mAdc, V CE= 20Vdc, f = 100MHz)
Output Capacitance
(V CB = –10 Vdc, I E = 0, f = 1.0 MHz)
Input Capacitance
(V EB = –2.0Vdc, I C = 0, f = 1.0 MHz)
f
T
C
obo
C
ibo
SWITCHING CHARACTERISTICS
Turn–On Time
(V CC = –30 Vdc,
Delay Time
I C = –150 mAdc, I B1 = –15 mAdc)
Rise Time
Storage Time
(V CC = –6.0 Vdc,
Fall Time
I C = –150 mAdc,I B1 = I B2 = 15 mAdc)
Turn–Off Time
1. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%.
t on
td
tr
ts
tf
t off
ns
ns
K2–2/2