APTDF100H60G Diode Full Bridge Power Module VRRM = 600V IC = 100A @ Tc = 80°C Application + AC1 • • • • AC2 Uninterruptible Power Supply (UPS) Induction heating Welding equipment High speed rectifiers Features • • • • • • - • Ultra fast recovery times Soft recovery characteristics High blocking voltage High current Low leakage current Very low stray inductance - Symmetrical design - Lead frames for power connections High level of integration Benefits - • • • • • • AC1 Absolute maximum ratings Symbol VR VRRM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage IF(A V) Maximum Average Forward Current IF(RMS) IFSM RMS Forward Current Duty cycle = 50% Non-Repetitive Forward Surge Current 8.3ms Duty cycle = 50% TC = 25°C TC = 80°C TC = 45°C TC = 45°C Max ratings Unit 600 V 135 100 135 500 A June, 2006 + Outstanding performance at high frequency operation Low losses Low noise switching Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-4 APTDF100H60G – Rev 1 • AC2 APTDF100H60G All ratings @ Tj = 25°C unless otherwise specified Symbol Characteristic VF Diode Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance Dynamic Characteristics Symbol Characteristic trr Reverse Recovery Time trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current Test Conditions IF = 100A IF = 200A IF = 100A Tj = 125°C Tj = 25°C VR = 600V Tj = 125°C IF = 100A VR = 400V di/dt = 200A/µs IF = 100A VR = 400V di/dt=1000A/µs Min Typ Tj = 25°C 34 Tj = 25°C Tj = 125°C Tj = 25°C 160 220 290 Tj = 125°C Tj = 25°C 1530 5 Tj = 125°C 13 Tj = 125°C Symbol Characteristic Min Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz To Heatsink M5 2500 -40 -40 -40 2.5 Unit V µA pF Max Unit ns ns nC A 100 ns 2890 nC 44 A Typ Max Unit 0.55 °C/W V 175 125 100 4.7 160 °C N.m g June, 2006 Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Max 2.0 190 Test Conditions IF=1A,VR=30V di/dt = 100A/µs Typ 1.6 2.0 1.3 250 500 VR = 600V Thermal and package characteristics RthJC VISOL TJ TSTG TC Torque Wt Min www.microsemi.com 2-4 APTDF100H60G – Rev 1 Electrical Characteristics APTDF100H60G Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.6 0.9 0.5 0.7 0.4 0.5 0.3 0.2 0.3 0.1 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage trr, Reverse Recovery Time (ns) 250 T J=175°C 200 150 TJ =25°C 100 TJ =125°C TJ=-55°C 50 0 0.0 0.5 1.0 1.5 2.0 2.5 250 100 A 200 150 50 A 100 50 3.0 0 200 QRR vs. Current Rate Charge 200 A T J=125°C VR=400V 3 100 A 50 A 2 1 0 0 200 400 600 800 1000 1200 IRRM, Reverse Recovery Current (A) QRR, Reverse Recovery Charge (µC) VF, Anode to Cathode Voltage (V) 4 400 600 800 -diF/dt (A/µs) 1000 1200 IRRM vs. Current Rate of Charge 60 200 A T J=125°C V R=400V 50 100 A 40 50 A 30 20 10 0 0 200 400 -diF/dt (A/µs) 600 800 1000 1200 -diF/dt (A/µs) Capacitance vs. Reverse Voltage Max. Average Forward Current vs. Case Temp. 150 1400 1200 Duty Cycle = 0.5 TJ =175°C 125 800 600 400 100 June, 2006 1000 IF(AV) (A) C, Capacitance (pF) T J=125°C VR=400V 200 A 75 50 25 200 0 0 1 10 100 1000 VR, Reverse Voltage (V) 25 50 75 100 125 150 175 Case Temperature (°C) www.microsemi.com 3-4 APTDF100H60G – Rev 1 IF, Forward Current (A) Trr vs. Current Rate of Charge 300 300 APTDF100H60G SP4 Package outline (dimensions in mm) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 4-4 APTDF100H60G – Rev 1 June, 2006 ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :