MICROSEMI APTDF400AK170G

APTDF400AK170G
Diode Phase leg
Power Module
VRRM = 1700V
IC = 400A @ Tc = 55°C
Application
K1
•
•
•
•
•
A1/K2
Anti-Parallel diode
Uninterruptible Power Supply (UPS)
Induction heating
Welding equipment
High speed rectifiers
Features
•
•
•
•
•
•
A2
•
A2
Benefits
•
•
•
•
•
•
Outstanding performance at high frequency
operation
Low losses
Low noise switching
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
RoHS Compliant
Absolute maximum ratings
Symbol
VR
VRRM
Parameter
Maximum DC reverse Voltage
Maximum Peak Repetitive Reverse Voltage
IF(A V)
Maximum Average Forward
Current
IF(RMS)
IFSM
RMS Forward Current
Non-Repetitive Forward Surge Current
Duty cycle = 50%
Tc = 25°C
Tc = 55°C
Tj = 25°C
Max ratings
Unit
1700
V
480
400
500
1500
A
June, 2006
A1/K2
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1-3
APTDF400AK170G – Rev 1
K1
Ultra fast recovery times
Soft recovery characteristics
High blocking voltage
High current
Low leakage current
Very low stray inductance
- Symmetrical design
- M5 power connectors
High level of integration
APTDF400AK170G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
VF
Diode Forward Voltage
IF = 400A
IRM
Maximum Reverse Leakage Current
VR = 1700V
Dynamic Characteristics
Symbol Characteristic
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
Min
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Test Conditions
IF = 400A
VR = 900V
di/dt = 4000A/µs
Min
Typ
Tj = 25°C
572
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
704
80
140
280
400
Thermal and package characteristics
Symbol
RthJC
VISOL
TJ
TSTG
TC
Characteristic
Junction to Case Thermal Resistance
Min
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Torque
Mounting torque
3500
-40
-40
-40
3
2
Wt
Package Weight
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
To heatsink
For terminals
Typ
2.2
2.1
M6
M5
Typ
Max
2.5
Unit
V
750
1000
µA
Max
Unit
ns
µC
A
Max
0.095
150
125
100
5
3.5
280
Unit
°C/W
V
°C
N.m
g
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2-3
APTDF400AK170G – Rev 1
June, 2006
SP6 Package outline (dimensions in mm)
APTDF400AK170G
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.1
0.9
0.08
0.7
0.06
0.5
0.04
0.3
0.02
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
Rectangular Pulse Duration (Seconds)
Forward Current vs Forward Voltage
TJ=25°C
800
600
TJ=125°C
400
200
TJ=25°C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
trr , Reverse Recovery Time (ns)
800
0
TJ=125°C
V R=900V
700
600
500
800 A
400
400 A
300
200 A
200
0
5000 10000 15000 20000 25000
VF, Anode to Cathode Voltage (V)
-diF/dt (A/µs)
IRRM vs. Current Rate of Charge
QRR vs. Current Rate Charge
320
TJ=125°C
VR =900V
280
800 A
400 A
240
200
200 A
160
120
80
0
5000 10000 15000 20000 25000
-diF/dt (A/µs)
IRRM, Reverse Recovery Current (A)
Q RR, Reverse Recovery Charge (µC)
10
Trr vs. Current Rate of Charge
1000
IF, Forward Current (A)
1
1600
TJ=125°C
V R=900V
1400
400 A
800 A
200 A
1200
1000
800
600
400
200
0
5000 10000 15000 20000 25000
-diF/dt (A/µs)
Max. Average Forward Current vs. Case Temp.
600
Duty Cycle = 0.5
TJ=150°C
400
300
June, 2006
200
100
0
0
25
50
75
100
125
150
Case Temperature (ºC)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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3-3
APTDF400AK170G – Rev 1
IF(AV) (A)
500