APTDF200H170G Diode Full Bridge Power Module VRRM = 1700V IC = 200A @ Tc = 55°C Application + AC1 • • • • AC2 Uninterruptible Power Supply (UPS) Induction heating Welding equipment High speed rectifiers Features • • • • • • - • Ultra fast recovery times Soft recovery characteristics High blocking voltage High current Low leakage current Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Benefits • - • • • • • AC1 Outstanding performance at high frequency operation Low losses Low noise switching Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant Absolute maximum ratings Symbol VR VRRM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage IF(A V) Maximum Average Forward Current IF(RMS) IFSM RMS Forward Current Non-Repetitive Forward Surge Current Duty cycle = 50% Max ratings Unit 1700 V Tc = 25°C 240 Tc = 55°C 200 250 600 Tj = 25°C A June, 2006 + These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-3 APTDF200H170G – Rev 1 AC2 APTDF200H170G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions VF Diode Forward Voltage IF = 200A IRM Maximum Reverse Leakage Current VR = 1700V Dynamic Characteristics Symbol Characteristic trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current Min Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Test Conditions IF = 200A VR = 900V di/dt = 2000A/µs Min Typ Tj = 25°C 572 Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 704 40 70 140 200 Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Torque Mounting torque 3500 -40 -40 -40 3 2 Wt Package Weight Operating junction temperature range Storage Temperature Range Operating Case Temperature To heatsink For terminals Typ 2.2 2.1 M6 M5 Typ Max 2.5 Unit V 350 600 µA Max Unit ns µC A Max 0.18 150 125 100 5 3.5 280 Unit °C/W V °C N.m g www.microsemi.com 2-3 APTDF200H170G – Rev 1 June, 2006 SP6 Package outline (dimensions in mm) APTDF200H170G Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.2 0.9 0.16 0.7 0.12 0.5 0.08 0.3 0.04 0.1 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage TJ=25°C 400 300 TJ=125°C 200 100 TJ=25°C 0.0 0.5 1.0 1.5 2.0 2.5 3.0 trr, Reverse Recovery Time (ns) 800 0 TJ=125°C V R=900V 700 600 500 400 A 400 200 A 300 100 A 200 0 3000 VF , Anode to Cathode Voltage (V) TJ=125°C VR =900V 140 400 A 200 A 120 100 100 A 80 60 40 0 3000 6000 9000 9000 12000 IRRM vs. Current Rate of Charge QRR vs. Current Rate Charge 160 6000 -diF /dt (A/µs) 12000 IRRM, Reverse Recovery Current (A) QRR, Reverse Recovery Charge (µC) 10 Trr vs. Current Rate of Charge 500 IF, Forward Current (A) 1 800 TJ=125°C V R=900V 700 200 A 400 A 100 A 600 500 400 300 200 100 0 3000 -diF/dt (A/µs) 6000 9000 12000 -diF/dt (A/µs) Max. Average Forward Current vs. Case Temp. 300 Duty Cycle = 0.5 TJ=150°C 200 150 June, 2006 100 50 0 0 25 50 75 100 125 150 Case Temperature (ºC) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 3-3 APTDF200H170G – Rev 1 IF(AV) (A) 250