APTDF200H120G Diode Full Bridge Power Module VRRM = 1200V IC = 200A @ Tc = 60°C Application + AC1 • • • • AC2 Uninterruptible Power Supply (UPS) Induction heating Welding equipment High speed rectifiers Features • • • • • • - • Ultra fast recovery times Soft recovery characteristics High blocking voltage High current Low leakage current Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Benefits • AC1 • • • • • - Outstanding performance at high frequency operation Low losses Low noise switching Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant Absolute maximum ratings Symbol VR VRRM IF(A V) Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Average Forward Duty cycle = 50% Current IF(RMS) IFSM RMS Forward Current Duty cycle = 50% Non-Repetitive Forward Surge Current 8.3ms TC = 25°C TC = 60°C TC = 45°C TC = 45°C Max ratings Unit 1200 V 235 200 235 1500 A These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-4 APTDF200H120G – Rev 1 June, 2006 + AC2 APTDF200H120G All ratings @ Tj = 25°C unless otherwise specified Symbol Characteristic VF Diode Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance Dynamic Characteristics Symbol Characteristic trr Reverse Recovery Time trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current Test Conditions IF = 200A IF = 300A IF = 200A Tj = 125°C Tj = 25°C VR = 1200V Tj = 125°C Min IF = 200A VR = 800V di/dt=2000A/µs Min Typ Tj = 25°C 45 Tj = 25°C 385 Tj = 125°C Tj = 25°C Tj = 125°C 480 2.1 10.5 Tj = 25°C 12 Tj = 125°C 38 Tj = 125°C Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Torque Mounting torque 2500 -40 -40 -40 3 2 Wt Package Weight Operating junction temperature range Storage Temperature Range Operating Case Temperature To heatsink For terminals www.microsemi.com M6 M5 Unit V 220 Test Conditions IF = 200A VR = 800V di/dt = 400A/µs Max 3.0 150 600 VR = 1200V IF=1A,VR=30V di/dt = 200A/µs Typ 2.4 2.7 1.8 µA pF Max Unit ns ns µC A 210 ns 19 µC 140 A Typ Max 0.285 175 125 100 5 3.5 280 Unit °C/W V °C N.m g 2-4 APTDF200H120G – Rev 1 June, 2006 Electrical Characteristics APTDF200H120G Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.3 0.9 0.25 0.7 0.2 0.5 0.15 0.3 0.1 0.1 0.05 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage Trr vs. Current Rate of Charge T J=175°C 400 T J=125°C 300 200 TJ =-55°C 100 T J=25°C 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 600 T J=125°C V R=800V 500 400 300 A 300 200 200 A 100 A 100 0 0 3.5 400 800 1200 1600 2000 2400 -diF/dt (A/µs) IRRM vs. Current Rate of Charge QRR vs. Current Rate Charge 24 T J=125°C V R=800V 300 A 20 200 A 16 12 100 A 8 0 400 800 1200 1600 2000 2400 IRRM, Reverse Recovery Current (A) QRR, Reverse Recovery Charge (µC) VF, Anode to Cathode Voltage (V) 150 TJ=125°C VR=800V 125 300 A 100 A 100 75 50 25 0 400 800 1200 1600 2000 2400 -diF/dt (A/µs) -diF/dt (A/µs) Capacitance vs. Reverse Voltage Max. Average Forward Current vs. Case Temp. 300 1500 1250 250 1000 200 IF(AV) (A) C, Capacitance (pF) 200 A 750 500 Duty Cycle = 0.5 T J=175°C 150 100 50 250 0 0 1 10 100 V R, Reverse Voltage (V) 1000 0 25 50 75 100 125 150 175 Case Temperature (ºC) www.microsemi.com 3-4 APTDF200H120G – Rev 1 June, 2006 500 trr, Reverse Recovery Time (ns) IF, Forward Current (A) 600 APTDF200H120G Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 4-4 APTDF200H120G – Rev 1 June, 2006 SP6 Package outline (dimensions in mm)