580 Pleasant St. Watertown, MA 02472 PH: (617) 926-0404 FAX: (617) 924-1235 2N2218A Features • • • • • SWITCHING TRANSISTOR JAN, JANTX, JANTXV Meets MIL 19500 /251 Collector - Base Voltage 75V Collector - Current 800 mA Medium Current, Bipolar Transistor Available in TO-5 SMALL SIGNAL BIPOLAR NPN SILICON TO-39 Maximum Ratings RATING Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Total Device Dissipation @ TA = 25 ° C Derate above 25 ° C Total Device Dissipation @ TC = 25 ° C Derate above 25 ° C Operating Junction&Storage Temperature Range SYMBOL VCEO VCBO VEBO IC PD T J, Tstg VALUE 50 75 6 800 0.8 4.6 3.0 17.0 - 55 to +200 UNIT Vdc Vdc Vdc mAdc WATTS mW/°°C WATTS mW/°°C °C SYMBOL Rθ θ JA Rθ θ JC MAX 217 59 UNIT ° C/W ° C/W PD Thermal Characteristics CHARACTERISTIC Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case MSCO933A 10-14-98 DSW2N2218A <-> (34724) 2N2218A Electrical Characteristics (TA = 25°C unless otherwise noted) OFF CHARACTERISTIC Collector - Emitter Breakdown Voltage (1) ( IC = 10 mA dc, IB = 0 ) Collector - Base Breakdown Voltage ( IC = 10 µ Adc, IE = 0 ) Emitter - Base Breakdown Voltage ( IE = 10 µ Adc, IC = 0 ) Collector - Emitter Cutoff Current ( VCE = 50 Vdc ) Collector - Base Cutoff Current ( VCB = 60 Vdc, IE = 0 ) ( VCB = 60 Vdc, IE = 0, T A = 150 ° C ) Emitter - Base Cutoff Current ( VEB = 4 Vdc ) ( VEB = 6 Vdc ) SYMBOL V(BR)CEO ON CHARACTERISTIC DC Current Gain ( IC = 0.1 mA dc, VCE = 10 Vdc ) (1) ( IC = 1 mA dc, VCE = 10 Vdc ) (1) ( IC = 10 mA dc, VCE = 10 Vdc ) (1) ( IC = 150 mA dc, VCE = 10 Vdc ) (1) ( IC = 500 mA dc, VCE = 10 Vdc ) (1) ( IC = 10 mA dc, VCE = 10 Vdc, TJ = - 55°°C ) (1) Collector - Emitter Saturation Voltage ( IC = 150 mAdc, IB = 15 mAdc ) (1) ( IC = 500 mAdc, IB = 50 mAdc ) (1) Base - Emitter Saturation Voltage ( IC = 150 mAdc, IB = 15 mAdc ) (1) ( IC = 500 mAdc, IB = 50 mAdc ) (1) SYMBOL hFE MIN MAX UNIT 50 Vdc 75 Vdc 6 Vdc V(BR)CBO V(BR)EBO ICES 10 nAdc 10 10 nAdc µ Adc 10 10 nAdc µ Adc MAX UNIT ICBO IEBO MIN 30 35 40 40 20 35 150 120 VCE(sat) 0.3 1.0 Vdc Vdc 1.2 2.0 Vdc Vdc VBE(sat) 0.6 1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤.2% MSCO933A 10-14-98 DSW2N2218A <-> (34724) 2N2218A Electrical Characteristics (TA = 25°C unless otherwise noted) SMALL - SIGNAL CHARACTERISTICS Output Capacitance ( VCB = 10 Vdc, IE = 0, 100kHz ≤ f ≤ 1 MHz ) Input Capacitance ( VEB = 0.5 Vdc, IC = 0, 100kHz ≤ f ≤ 1 MHz ) SYMBOL Cobo SWITCHING CHARACTERISTICS Turn - On Time ( VCC = 30 Vdc, IC = 150 mAdc, IB1 =15 mAdc) ( See FIGURE 1 ) Turn - Off Time ( VCC = 30 Vdc, IC = 150 mAdc, IB1 = - IB2 = 15 mAdc) ( See FIGURE 2 ) SYMBOL ton MIN MAX UNIT 8.0 pF 25 pF MAX UNIT 35 ns 300 ns MAX UNIT Cibo MIN toff Small - Signal AC Characteristics (TA = 25°C) LOW FREQUENCY Common - Emitter Forward Current Transfer Ratio ( IC = 1 mA, VCE = 10 V, f = 1kHz ) HIGH FREQUENCY Common - Emitter Forward Current Transfer Ratio ( IC = 20 mA, VCE = 20 V, f = 100 MHz ) Spice Model SYMBOL hfe 35 |hfe| 2.5 (based upon typical device characteristics) Q2N2218A NPN ( IS = 21.2f + NE = 2.05 + NC = 1.605 + FC = 0.5 + ITF = 1.0 XTI = 3.0 IKF = 1.255 IKR = 0.8992 CJE = 29.6p XTF = 0.0 EG = 1.11 NK = 0.9394 RC = 0.0 MJE = 0.3333 VTF = 10.0 ) MIN 12 *1 VAF = 103.8 XTB = 1.5 CJC = 19.4p VJE = 0.75 BF = 90.7 BR = 1.031 MJC = 0.3333 TR = 275.0 n ISE = 3.34p ISC = 3.299p VJC = 0.75 TF= 564.5p *1. Microsemi Corp. claims no responsibility for misapplication of Spice Model information. Spice modeling should be used as a precursor guide to in-circuit performance. Actual performance is the responsibility of the user/designer. MSCO933A 10-14-98 DSW2N2218A <-> (34724) 2N2218A TO-39 CASE OUTLINE DIE CHARACTERISTICS Back is Collector Chip Thickness is: 10 MILS TYP Metalization is: Top = Al, Back = Au DIE OUTLINE MSCO933A 10-14-98 DSW2N2218A <-> (34724) 2N2218A FIGURE 1 Saturated Turn-on Time Test Circuit t FIGURE 2 MSCO933A 10-14-98 Saturated Turn-off Time Test Circuit DSW2N2218A <-> (34724) 2N2218A DC CURRENT GAIN VCE = 10 V hFE CURRENT GAIN 125 125 typ @ 25C 100 100 75 75 50 50 typ @ -55C 25 25 0 0 .0001 .001 .01 .1 1 IC COLLECTOR CURRENT (A) VCE, COLLECTOR-EMITTER (V) FIGURE 3 COLLECTOR SATURATION vs BASE CURRENT TJ = 25 C 1.0 1.0 0.8 0.8 IC = 500 mA 0.6 0.6 IC = 150 mA 0.4 0.4 0.2 0.2 0.0 .0001 0.0 .001 .01 IB, BASE CURRENT .1 1 (A) FIGURE 4 MSCO933A 10-14-98 DSW2N2218A <-> (34724) VBE, BASE-EMITTER VOLTAGE (V) 2N2218A BASE SATURATION vs BASE CURRENT TJ = 25 C 1.25 1.25 IC = 500 ma 1.00 1.00 IC = 150 ma 0.75 0.75 0.50 .001 0.50 .01 .1 1 IB, BASE CURRENT (A) FIGURE 5 JUNCTION CAPACITANCE (pF) JUNCTION CAPACITANCE TJ = 25 C 100 kHz < f < 1 MHz 30 30 25 25 CIBO 20 20 COBO 15 15 10 10 5 5 0 .01 .1 1 10 0 100 REVERSE JUNCTION VOLTAGE (V) FIGURE 6 MSCO933A 10-14-98 DSW2N2218A <-> (34724) 2N2218A SWITCHING TURN - 0N TIME TJ = 25 C IC/IB = 10 100 ton TIME (ns) 100 max. min. 10 10 10 1000 100 COLLECTOR CURRENT (mA) FIGURE 7 SWITCHING TURN - OFF TIME TJ = 25 C IC/IB = 10 1000 (ns) 1000 toff TIME max. min. 100 10 100 500 100 COLLECTOR CURRENT (mA) FIGURE 8 MSCO933A 10-14-98 DSW2N2218A <-> (34724) 2N2218A NORMALIZED GAIN NORMALIZED GAIN VS FREQUENCY TJ = 25C IC = 20 mA VCE = 20 V 1 1 .1 .1 .01 1 10 100 .01 1000 FREQUENCY MHz FIGURE 9 MSCO933A 10-14-98 DSW2N2218A <-> (34724)