MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# NPN 2N6515, 2N6517 PNP 2N6519, 2N6520 Features High Voltage l Through Hole Package l 150oC Junction Temperature l Voltage and Current are negative for PNP transistors Transistor 625mW Pin Configuration Bottom View C B E TO-92 A Mechanical Data E l Case: TO-92, Molded Plastic B l Polarity: indicated as above. Maximum Ratings @ 25oC Unless Otherwise Specified Charateristic Symbol Collector-Emitter Voltage 2N6515 2N6519 2N6517, 2N6520 Collector-Base Voltage 2N6515 2N6519 2N6517, 2N6520 Emitter-Base Voltage 2N6515-6517 2N6519-6520 VCEO VCBO Value 250 300 350 250 300 350 V V D VEBO 6.0 5.0 V Base Current IB 250 mA Collector Current(DC) IC 500 625 5.0 1.5 12 mA W o mW/ C W o mW/ C o Power Dissipation@TA=25 C Pd Power Dissipation@TC=25o C Pd Thermal Resistance, Junction to Ambient Air Thermal Resistance, Junction to Case Operating & Storage Temperature C Unit RJA 200 o RJC 83.3 o Tj, TSTG -55~150 C/W C/W o C G DIMENSIONS DIM A B C D E G INCHES MIN .175 .175 .500 .016 .135 .095 MAX .185 .185 --.020 .145 .105 www.mccsemi.com MM MIN 4.45 4.46 12.7 0.41 3.43 2.42 MAX 4.70 4.70 --0.63 3.68 2.67 NOTE MCC NPN 2N6515 2N6517 PNP 2N6519 2N6520 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max 250 300 350 — — — 250 300 350 — — — 6.0 5.0 — — — — — 50 50 50 — — 50 50 2N6515 2N6519 2N6517, 2N6520 35 30 20 — — — (IC = 10 mAdc, VCE = 10 Vdc) 2N6515 2N6519 2N6517, 2N6520 50 45 30 — — — (IC = 30 mAdc, VCE = 10 Vdc) 2N6515 2N6519 2N6517, 2N6520 50 45 30 300 270 200 (IC = 50 mAdc, VCE = 10 Vdc) 2N6515 2N6519 2N6517, 2N6520 45 40 20 220 200 200 (IC = 100 mAdc, VCE = 10 Vdc) 2N6515 2N6519 2N6517, 2N6520 25 20 15 — — — — — — — 0.30 0.35 0.50 1.0 — — — 0.75 0.85 0.90 — 2.0 Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = 100 µAdc, IE = 0 ) Emitter–Base Breakdown Voltage (IE = 10 µAdc, IC = 0) V(BR)CEO 2N6515 2N6519 2N6517, 2N6520 Vdc V(BR)CBO 2N6515 2N6519 2N6517, 2N6520 Vdc V(BR)EBO 2N6515, 2N6517 2N6519, 2N6520 Collector Cutoff Current (VCB = 150 Vdc, IE = 0) (VCB = 200 Vdc, IE = 0) (VCB = 250 Vdc, IE = 0) 2N6515 2N6519 2N6517, 2N6520 Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) (VEB = 4.0 Vdc, IC = 0) 2N6515, 2N6517 2N6519, 2N6520 Vdc ICBO nAdc IEBO nAdc ON CHARACTERISTICS(1) DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) hFE Collector–Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 20 mAdc, IB = 2.0 mAdc) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VCE(sat) Base–Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 20 mAdc, IB = 2.0 mAdc) (IC = 30 mAdc, IB = 3.0 mAdc) VBE(sat) Base–Emitter On Voltage (IC = 100 mAdc, VCE = 10 Vdc) VBE(on) 1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%. www.mccsemi.com — Vdc Vdc Vdc MCC NPN 2N6515 2N6517 PNP 2N6519 2N6520 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit fT 40 200 MHz Ccb — 6.0 pF — — 80 100 SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product(1) (IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz) Collector–Base Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) Emitter–Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Ceb 2N6515, 2N6517 2N6519, 2N6520 pF SWITCHING CHARACTERISTICS Turn–On Time (VCC = 100 Vdc, VBE(off) = 2.0 Vdc, IC = 50 mAdc, IB1 = 10 mAdc) ton — 200 µs Turn–Off Time (VCC = 100 Vdc, IC = 50 mAdc, IB1 = IB2 = 10 mAdc) toff — 3.5 µs 1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%. www.mccsemi.com MCC NPN 2N6515 2N6517 PNP 2N6519 2N6520 NPN PNP 2N6515 VCE = 10 V 2N6519 200 TJ = 125°C 100 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 200 25°C 70 -55°C 50 30 20 1.0 VCE = -10 V TJ = 125°C 25°C 100 70 -55°C 50 30 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 20 -1.0 70 100 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) -50 -70 -100 Figure 1. DC Current Gain 2N6517 VCE = 10 V 100 2N6520 200 TJ = 125°C VCE = -10 V hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 200 25°C 70 50 -55°C 30 20 10 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 25°C 70 -55°C 50 30 20 10 -1.0 50 70 100 TJ = 125°C 100 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) -50 -70 -100 2N6515, 2N6517 100 70 50 TJ = 25°C VCE = 20 V f = 20 MHz 30 20 10 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 f, T CURRENT-GAIN BANDWIDTH PRODUCT (MHz) f, T CURRENT-GAIN BANDWIDTH PRODUCT (MHz) Figure 2. DC Current Gain 2N6519, 2N6520 100 70 50 TJ = 25°C VCE = -20 V f = 20 MHz 30 20 10 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) Figure 3. Current–Gain — Bandwidth Product www.mccsemi.com -50 -70 -100 MCC NPN 2N6515 2N6517 PNP 2N6519 2N6520 NPN PNP 2N6515, 2N6517 1.4 2N6519, 2N6520 -1.4 TJ = 25°C 1.2 -1.2 0.8 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1.0 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 10 V 0.4 0.2 0 1.0 VCE(sat) @ IC/IB = 5.0 3.0 -1.0 -0.8 VBE(sat) @ IC/IB = 10 -0.6 VBE(on) @ VCE = -10 V -0.4 -0.2 VCE(sat) @ IC/IB = 10 2.0 TJ = 25°C 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 VCE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 5.0 0 -1.0 70 100 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) -50 -70 -100 Figure 4. “On” Voltages IC 10 IB 2.0 1.5 1.0 0.5 0 25°C to 125°C RθVC for VCE(sat) -55°C to 25°C -0.5 -1.0 -1.5 -2.0 -2.5 1.0 2N6519, 2N6520 RθV, TEMPERATURE COEFFICIENTS (mV/°C) RθV, TEMPERATURE COEFFICIENTS (mV/°C) 2N6515, 2N6517 2.5 -55°C to 125°C RθVB for VBE 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 2.5 IC 10 IB 2.0 1.5 25°C to 125°C 1.0 0.5 0 RθVB for VBE -55°C to 25°C -0.5 -1.0 -1.5 -2.0 RθVC for VCE(sat) -2.5 -1.0 -55°C to 125°C -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) -50 -70 -100 Figure 5. Temperature Coefficients 2N6515, 2N6517 2N6519, 2N6520 TJ = 25°C Ceb 30 20 10 7.0 5.0 Ccb 3.0 2.0 1.0 0.2 100 70 50 C, CAPACITANCE (pF) C, CAPACITANCE (pF) 100 70 50 Ceb TJ = 25°C 30 20 10 7.0 5.0 Ccb 3.0 2.0 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 200 1.0 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Capacitance www.mccsemi.com -100 -200 MCC NPN 2N6515 2N6517 PNP 2N6519 2N6520 NPN PNP 2N6515, 2N6517 1.0k 700 500 200 tr 100 70 50 100 70 50 30 30 20 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 tr 200 20 10 1.0 VCE(off) = -100 V IC/IB = 5.0 TJ = 25°C td @ VBE(off) = 2.0 V 300 t, TIME (ns) t, TIME (ns) VCE(off) = 100 V IC/IB = 5.0 TJ = 25°C td @ VBE(off) = 2.0 V 300 2N6519, 2N6520 1.0k 700 500 10 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) -50 -70 -100 Figure 7. Turn–On Time 2N6515, 2N6517 10k 7.0k 5.0k 2N6519, 2N6520 2.0k t, TIME (ns) 3.0k 500 2.0k 1.0k 700 500 tf tf 300 VCE(off) = 100 V IC/IB = 5.0 IB1 = IB2 TJ = 25°C 200 100 70 50 300 200 100 1.0 ts 1.0k 700 ts VCE(off) = -100 V IC/IB = 5.0 IB1 = IB2 TJ = 25°C 30 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 20 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) Figure 8. Turn–Off Time www.mccsemi.com -50 -70 -100