^Bs-rnL-donauaioi TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N3494 2N3495 CASE 31-03, STYLE 1 TO-39 (TO-205AD) MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage 2N3496 2N3497 VCEO VCBO VEBO Collector-Base Voltage Emitter-Base Voltage Collector Current — Continuous PNP SILICON i Unit 80 120 Vdc 80 120 Vdc ic CASE 22-03, STYLE 1 TO-18 (TO-206AA) GENERAL PURPOSE TRANSISTOR 2N3434 2N349S 2N3496 2N3497 45 Vdc 1 50 mAdc 2N3494 2N3496 ZN3495 2N3497 Total Device Dissipation (a, TA = 25°C Derate above 25°C PD Total Device Dissipation (ri TC = 25°C* Derate above 25'C PD Operating and Storage Junction Temperature Range 600 400 3.43 2.28 3.0 1.2 17.2 TJ. T stg 6.85 mW mW*°C Watts mW'"C -65tc + 200 C 'Indicates Data in addition to JEDEC Requirements. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min MM 80 120 - 80 120 — 45 — - 100 100 — 25 35 40 40 40 35 _ _ — — — 0.3 0.35 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown VoltageU) |lc - 10 mAdc, IB = 0} Collector-Base Breakdown Voltage UC = 10 uAdc, IE =• 0) 2N3494, 2N3496 2N3495, 2N3497 2N3494, 2N3496 2N3495. 2N3497 Emitter-Base Breakdown Voltage (l£ = 10 fiAtic, Ic = 0) Collector Cutoff Current (VCB = 50 Vdc, IE = 0| (VCB = 90 Vdc, If = O) Emitter Cutoff Current Vdc nAdc 'CBO !EBO (VBE = 3.0 Vdc, ic = o) Vdc V(BR)CBO V(BR)EBO 2N3494, 2N3496 2N3495, 2N3497 Vdc V|BR|CEO nAdc ON CHARACTERISTICS DC Current Gain(l) (lc - lOO^Adc. VCE = 10Vdcl dC = 1.0 mAdc, VCE - 10 Vdcl (lc = 10 mAdc. VCE = 10 Vdc) dC = 50 mAdc. VCE = 10 Vdcl (1C = 100 mAdc, VCE = 10 Vdcl Collector-Emitter Saturation Voltage (1C = 10 mAdc, IB = 1.0 mAdc] _ "FE 2N3494, 2N3496 2N3494, 2N3496 2N349S, 2N3497 Base-Emitter Saturation Voltage dC = 10 mAdc, lg = 1.0 mAdc) vCEIsat) vBE(satl 0.6 Vdc I i 0.9 Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain — Bandwidth ProductlZ) (IC - 20 mAdc, VCE = '° Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0. f = 100 kHz) Input Capacitance (VBE = 2-° vdc' ic = o. ' = ino kHz) Quality Semi-Conductors 2N3494. 2N3496 2N3495, 2N3497 2N3494, 2N3496 2N3495, 2N3497 fr cobo Qbo MHz 200 150 — — — 7.0 6.0 -~* 30 pF pF , Dnc. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N3494, 2N3495, 2N3496, 2N3497 ELECTRICAL CHARACTERISTICS (continued) (TA = 25"C unless otherwise noted.) Symbol Mln Max Unit nie 0.1 1.2 k ohms Voltage Feedback Ratio dC = 10 mAdc. VCE = 10 Vdc. f = 1.0 kHz) hre — 2.0 X 10-4 Small-Signal Current Gain (IC = 10 mAdc, VCE = '0 Vdc. f = 1.0 kHz) hfe 40 300 — Output Admittance (1C = 10 mAdc, VCE = hoe — 300 Mmhos Re(hie) — 30 Ohms ton - 300 ns toff — 1000 ns Characteristic Input Impedance dc = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 10 vdc- ' = '-0 kHz) Real Part of Input Impedance (1C = 20 mAdc, VCE *• 10 Vdc. < = 300 MHz) SWITCHING CHARACTERISTICS Turn-On Time (Vcc = 30 Vdc, Ic = 10 mAdc, IB1 = 1.0 mAdc) Turn-Off Time (Vcc • 30 vdc- >C = 10 mAdc. IBI = >B2 = 1-0 tnMc) (1) Pulse Test: Pulse Width £ 300 MS, Duty Cycle = 2.0%. (2) fy is defined as the frequency at which |hfe| extrapolates to unity. FIGURE 1 - TURN-ON TIME TEST CIRCUIT DUTY CYCLE •; 2.0% Quality Semi-Conductors FIGURE 2- TURN-OFF TIME TEST CIRCUIT 13 > 1.0 ml DUTY CYCLE-! 10