TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 P-CHANNEL MOSFET Qualified per MIL-PRF-19500/562 DEVICES LEVELS 2N6804 JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain – Source Voltage VDS -100 Vdc Gate – Source Voltage Continuous Drain Current VGS ± 20 Vdc ID1 -11 Adc ID2 -7 Adc Ptl 75 (1) W Rds(on) 0.3 (2) Ω -55 to +150 °C TC = +25°C Continuous Drain Current TC = +100°C Max. Power Dissipation TC = +25°C Drain to Source On State Resistance Operating & Storage Temperature Top, Tstg Note: (1) Derated Linearly by 0.6 W/°C for TC > +25°C (2) VGS = 10Vdc, ID = -7A 2N6804 TO-204AA (TO-3) ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. V(BR)DSS -100 VGS(th)1 VGS(th)2 VGS(th)3 -2.0 -1.0 Max. Unit OFF CHARACTERTICS Drain-Source Breakdown Voltage VGS = 0V, ID = 1mAdc Gate-Source Voltage (Threshold) VDS ≥ VGS, ID = -0.25mA VDS ≥ VGS, ID = -0.25mA, Tj = +125°C VDS ≥ VGS, ID = -0.25mA, Tj = -55°C Gate Current VGS = ±20V, VDS = 0V VGS = ±20V, VDS = 0V, Tj = +125°C Drain Current VGS = 0V, VDS = -80V VGS = 0V, VDS = -80V, Tj = +125°C Static Drain-Source On-State Resistance VGS = -10V, ID = -7A pulsed VGS = -10V, ID = -11A pulsed Tj = +125°C VGS = -10V, ID = -7A pulsed Diode Forward Voltage VGS = 0V, ID = -11A pulsed T4-LDS-0113 Rev. 2 (101520) Vdc -4.0 Vdc -5.0 IGSS1 IGSS2 ±100 ±200 nAdc IDSS1 IDSS2 -25 -0.25 µAdc mAdc rDS(on)1 rDS(on)2 0.3 0.36 Ω Ω rDS(on)3 0.55 Ω VSD -4.7 Vdc Page 1 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 DYNAMIC CHARACTERISTICS Parameters / Test Conditions Gate Charge: On-State Gate Charge Gate to Source Charge Gate to Drain Charge Symbol VGS = -10V, ID = -11A VDS = -80V Min. Qg(on) Qgs Qgd Max. Unit 29 7.1 21 nC Max. Unit SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Switching time tests: Turn-on delay time Rinse time Turn-off delay time Fall time ID = -11A, VGS = -10Vdc, Gate drive impedance = 7.5Ω, VDD = -35Vdc Diode Reverse Recovery Time di/dt ≤ 100A/µs, VDD ≤ -50V, IF = -11A T4-LDS-0113 Rev. 2 (101520) Min. td(on) tr td(off) tf 60 140 140 140 trr 250 ns ns Page 2 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PACKAGE DIMENSIONS Symbol CH LD CD PS PS1 HT LL LL1 MHD MHS HR HR1 s1 Dimensions Inches Millimeters Min Max Min Max .250 .360 6.35 9.15 .038 .043 0.97 0.110 .875 22.23 .420 .440 10.67 11.18 .205 .225 5.21 5.72 .060 .135 1.52 3.43 .312 .500 7.92 12.70 .050 1.27 .151 .161 3.84 4.09 1.177 1.197 29.90 30.40 .495 .525 12.57 13.34 .131 .188 3.33 4.78 .655 .675 16.64 17.15 Notes 3 3 3 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. These dimensions should be measured at points .050 inch (1.27 mm) to .055 inch (1.40 mm) below seating plane. Measurement will be made at the seating plane. 4. The seating plane of the header shall be flat within .001 inch (0.03 mm) concave to .004 inch (0.10 mm) convex inside a .930 inch (23.62 mm) diameter circle on the center of the header and flat within .001 inch (0.03 mm) concave to .006 inch (0.15 mm) convex overall. 5. Mounting holes shall be deburred on the seating plane side. 6. Drain is electrically connected to case. 7. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. FIGURE 1. Physical dimensions of transistor (TO-204AA). T4-LDS-0113 Rev. 2 (101520) Page 3 of 3