IRF350 2N6768 MECHANICAL DATA Dimensions in mm (inches) N-CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 11.18 (0.440) 10.67 (0.420) 2 26.67 (1.050) max. 17.15 (0.675) 16.64 (0.655) 1 VDSS ID(cont) RDS(on) 400V 14A Ω 0.300Ω FEATURES • REPETITIVE AVALANCHE RATINGS • DYNAMIC DV/DT RATING 20.32 (0.800) 18.80 (0.740) dia. 1.09 (0.043) 0.97 (0.038) dia. 2 plcs. 7.87 (0.310) 6.99 (0.275) 12.07 (0.475) 11.30 (0.445) 1.78 (0.070) 1.52 (0.060) • HERMETICALL SEALED • SIMPLE DRIVE REQUIREMENTS • EASE OF PARALLELING TO–3 (TO-204AA) Metal Package Pin 1 – Source Pin 2 – Gate Case – Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS Gate – Source Voltage ID Continuous Drain Current ±20V (VGS = 0 , Tcase = 25°C) 14A (VGS = 0 , Tcase = 100°C) 9.0A IDM Pulsed Drain Current 1 PD Power Dissipation @ Tcase = 25°C 56A Linear Derating Factor 1.2W/°C EAS Single Pulse Avalanche Energy IAR Avalanche Current 1 EAR 150W 3 11.3mJ 14A Repetitive Avalanche Energy 1 4 dv/dt Peak Diode Recovery TJ , Tstg Operating and Storage Temperature Range 15mJ 4.0V/ns -55 to +150°C Notes 1) Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 2) Repetitive Rating – Pulse width limited by maximum junction temperature. 3) VDD = 50V ,Peak IL = 14A , Starting TJ = 25°C 4) ISD ≤ 14A , di/dt ≤ 145A/μs , VDD ≤ 400V, TJ ≤ 150°C , Suggested RG = 2.35Ω Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 6252 Issue 1 IRF350 2N6768 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) VGS(th) gfs IDSS Zero Gate Voltage Drain Current IGSS IGSS Gate – Source Leakage Forward Gate – Source Leakage Reverse Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate – Source Charge Gate – Drain (“Miller”) Charge Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time BVDSS ΔBVDSS ΔTJ RDS(on) Test Conditions VGS = 0V ID = 1mA Reference to 25°C ID = 1mA VGS = 10V ID = 9.0A VGS = 10V ID = 14A VDS = VGS ID = 250μA VDS ≥ 15V IDS = 9.0A VGS = 0V VDS = 320V TJ = 125°C VGS = +20V VGS = –20V VGS = 0V VDS = 25V f = 1MHz VGS = 10V ID = 14A VDS = 200V VDD = 200V ID = 14A RG = 2.35Ω trr Qrr ton SOURCE – DRAIN DIODE CHARACTERISTICS Continuous Source Current Pulse Source Current 2 IS = 28A TJ = 25°C Diode Forward Voltage 1 VGS = 0 Reverse Recovery Time IF = 28A TJ = 25°C 1 Reverse Recovery Charge di / dt ≤ 100A/μs VDD ≤ 50V Forward Turn–On Time LD + LS PACKAGE CHARACTERISTICS Total Inductance (measured from the centre of drain pad to center of source pad) RthJC RthJA THERMAL CHARACTERISTICS Thermal Resistance Junction – Case Thermal Resistance Junction – Ambient (Typical socket mount) IS ISM VSD Min. Typ. Max. Unit V 400 V / °C 0.46 0.300 0.400 4.0 2.0 6.0 Ω V S 25 250 +100 –100 2660 680 250 52 5.0 25 (Ω) Parameter STATIC ELECTRICAL RATINGS Drain – Source Breakdown Voltage Temperature Coefficient of Breakdown Voltage Static Drain – Source On–State Resistance Gate Threshold Voltage Forward Transconductance μA nA pF 110 18 65 35 190 170 130 nC ns 14 56 A 1.7 V 1200 250 ns μC Negligible nH 6.1 0.83 30 °C/W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 6252 Issue 1