1000V 15A APT15D100K APT15D100KG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode -Motor Controllers -Converters -Inverters • Snubber Diode • Ultrafast Recovery Times • Low Losses • Soft Recovery Characteristics • Low Noise Switching • Popular TO-220 Package • Cooler Operation • Low Forward Voltage • Higher Reliability Systems • Low Leakage Current • Increased System Power Density • PFC 2 1 1 - Cathode 2 - Anode Back of Case - Cathode MAXIMUM RATINGS Symbol VR All Ratings: TC = 25°C unless otherwise specified. Characteristic / Test Conditions APT15D100K(G) UNIT 1000 Volts Maximum D.C. Reverse Voltage VRRM Maximum Peak Repetitive Reverse Voltage VRWM Maximum Working Peak Reverse Voltage IF(AV) Maximum Average Forward Current (TC = 130°C, Duty Cycle = 0.5) 15 RMS Forward Current (Square wave, 50% duty) 31 Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) 80 IF(RMS) IFSM TJ,TSTG TL Amps -55 to 175 Operating and StorageTemperature Range °C 300 Lead Temperature for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance, VR = 200V MIN TYP MAX IF = 15A 1.9 2.3 IF = 30A 2.2 IF = 15A, TJ = 125°C 1.7 Volts VR = VR Rated 250 VR = VR Rated, TJ = 125°C 500 Microsemi Website - http://www.microsemi.com 17 UNIT µA pF 11-2006 VF Characteristic / Test Conditions 053-0010 Rev F Symbol DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions trr Reverse Recovery Time trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM trr Qrr IRRM trr Qrr IRRM APT15D100K(G) MIN TYP - 28 - 260 - 540 - 4 - 300 ns - 1550 nC - 9 - 150 ns - 2150 nC - 26 Amps MIN TYP IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C VR = 667V, TC = 25°C Reverse Recovery Time IF = 15A, diF/dt = -200A/µs Reverse Recovery Charge VR = 667V, TC = 125°C Maximum Reverse Recovery Current Reverse Recovery Time IF = 15A, diF/dt = -1000A/µs Reverse Recovery Charge Maximum Reverse Recovery Current UNIT ns IF = 15A, diF/dt = -200A/µs Maximum Reverse Recovery Current MAX VR = 667V, TC = 125°C nC - - Amps Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions RθJC Junction-to-Case Thermal Resistance RθJA Junction-to-Ambient Thermal Resistance WT Torque MAX 1.18 °C/W 80 Package Weight 0.07 oz 1.9 g Maximum Mounting Torque 10 lb•in 1.1 N•m Microsemi Reserves the right to change, without notice, the specifications and information contained herein. 0.9 1.00 0.7 0.80 0.5 0.40 0.3 Note: PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 1.20 0.60 t 0.1 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC SINGLE PULSE 0.05 0 -5 10 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION RC MODEL 11-2006 Junction temp (°C) 053-0010 Rev F t1 t2 0.20 UNIT 0.676 °C/W 0.00147 J/°C 0.504 °C/W 0.0440 J/°C Power (watts) Case temperature (°C) FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL TYPICAL PERFORMANCE CURVES APT15D100K(G) 45 400 40 350 T = 125°C J V = 667V 30 25 20 TJ = 25°C TJ = 125°C 15 10 TJ = 150°C 5 0 TJ = -55°C 0 0.5 1 1.5 2 2.5 3 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage Qrr, REVERSE RECOVERY CHARGE (nC) 3500 T = 125°C J V = 667V R 3000 30A 2500 2000 15A 1500 1000 7.5A 500 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 1.2 0.4 Qrr 0.2 0.0 7.5A 200 150 100 35 T = 125°C J V = 667V 30A R 30 25 20 15 15A 10 7.5A 5 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 5. Reverse Recovery Current vs. Current Rate of Change 35 Duty cycle = 0.5 T = 175°C J 30 trr 0.6 15A 250 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/µs) Figure 3. Reverse Recovery Time vs. Current Rate of Change Qrr IRRM 300 0 1.0 0.8 R 50 25 IF(AV) (A) Kf, DYNAMIC PARAMETERS (Normalized to 1000A/µs) trr trr, REVERSE RECOVERY TIME (ns) 35 IRRM, REVERSE RECOVERY CURRENT (A) IF, FORWARD CURRENT (A) 30A 20 15 10 5 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Dynamic Parameters vs. Junction Temperature 0 25 50 75 100 125 150 175 Case Temperature (°C) Figure 7. Maximum Average Forward Current vs. CaseTemperature 100 80 11-2008 60 40 20 0 1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 053-0010 Rev F CJ, JUNCTION CAPACITANCE (pF) 120 APT15D100K(G) Vr diF /dt Adjust +18V APT10078B2LL 0V D.U.T. 30μH trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 IF - Forward Conduction Current 2 diF /dt - Rate of Diode Current Change Through Zero Crossing. 3 IRRM - Maximum Reverse Recovery Current. 4 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. 5 1 4 Zero 5 0.25 IRRM 3 2 Qrr - Area Under the Curve Defined by IRRM and trr. Figure 10, Diode Reverse Recovery Waveform and Definitions 053-0010 Rev F 11-2008 TO-220 (K) Package Outline Dimensions in Millimeters and (Inches) Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.