MICROSEMI APTGT50A120T1G

APTGT50A120T1G
Phase leg
Fast Trench + Field Stop IGBT®
Power Module
5
Q1
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
11
6
CR1
7
8
3
4
Q2
Features
• Fast Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
• Very low stray inductance
- Symmetrical design
• Internal thermistor for temperature monitoring
• High level of integration
NTC
CR2
9
10
1
2
VCES = 1200V
IC = 50A @ Tc = 80°C
12
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS Compliant
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Absolute maximum ratings
ICM
VGE
PD
RBSOA
TC = 25°C
TC = 80°C
TC = 25°C
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
TC = 25°C
TJ = 125°C
Max ratings
1200
75
50
100
±20
277
100A @ 1150V
Unit
V
A
August, 2007
IC
Parameter
Collector - Emitter Breakdown Voltage
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1–5
APTGT50A120T1G – Rev 0
Symbol
VCES
APTGT50A120T1G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
ICES
Test Conditions
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter Saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
VGE = 0V, VCE = 1200V
Tj = 25°C
VGE =15V
IC = 50A
Tj = 125°C
VGE = VCE , IC = 2mA
VGE = 20V, VCE = 0V
Min
Typ
1.4
1.7
2.0
5.8
5.0
Max
Unit
250
2.1
µA
6.5
400
V
nA
Max
Unit
V
Dynamic Characteristics
Symbol
Cies
Crss
Td(on)
Tr
Td(off)
Tf
Td(on)
Tr
Td(off)
Characteristic
Input Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Test Conditions
VGE = 0V,VCE = 25V
f = 1MHz
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 50A
RG = 18Ω
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 50A
RG = 18Ω
VGE = ±15V
Tj = 125°C
VBus = 600V
IC = 50A
Tj = 125°C
RG = 18Ω
Min
Test Conditions
Min
Typ
3600
160
90
30
420
pF
ns
70
90
50
520
ns
90
5
mJ
5.5
Reverse diode ratings and characteristics
IRM
IF
1200
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VR=1200V
IF = 50A
Tc = 80°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
50
1.6
1.6
170
Tj = 125°C
Tj = 25°C
280
5.6
Tj = 125°C
Tj = 25°C
Tj = 125°C
9.9
2.2
4.1
Er
Reverse Recovery Energy
IF = 50A
VR = 600V
di/dt =1900A/µs
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Unit
V
Tj = 25°C
Tj = 125°C
DC Forward Current
VF
Max
250
500
µA
A
2.1
V
ns
August, 2007
VRRM
Typ
µC
mJ
2–5
APTGT50A120T1G – Rev 0
Symbol Characteristic
APTGT50A120T1G
Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Min
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
Typ
IGBT
Diode
To heatsink
M4
2500
-40
-40
-40
2.5
Max
0.45
0.72
Unit
°C/W
V
150
125
100
4.7
80
°C
N.m
g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
R25
Resistance @ 25°C
B 25/85 T25 = 298.15 K
RT =
Min
Typ
50
3952
Max
Unit
kΩ
K
R25
T: Thermistor temperature

 1
1  RT: Thermistor value at T


exp  B25 / 85 
− 
 T25 T 

See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
www.microsemi.com
3–5
APTGT50A120T1G – Rev 0
August, 2007
SP1 Package outline (dimensions in mm)
APTGT50A120T1G
Typical Performance Curve
Output Characteristics (VGE=15V)
Output Characteristics
100
100
TJ = 125°C
TJ=25°C
80
80
VGE=17V
VGE=13V
60
VGE=15V
40
40
VGE=9V
20
20
60
IC (A)
IC (A)
TJ=125°C
0
0
0
0.5
1
1.5
2
VCE (V)
3
0
3.5
12
TJ=25°C
80
8
E (mJ)
TJ=125°C
40
3
4
6
Eon
Eon
Eoff
Er
4
TJ=125°C
20
2
0
0
5
6
7
8
9
10
11
0
12
20
Switching Energy Losses vs Gate Resistance
12
8
60
80
100
Reverse Bias Safe Operating Area
120
VCE = 600V
VGE =15V
IC = 50A
TJ = 125°C
10
40
IC (A)
VGE (V)
Eon
100
80
Eoff
IC (A)
E (mJ)
2
VCE (V)
VCE = 600V
VGE = 15V
RG = 18Ω
TJ = 125°C
10
60
1
Energy losses vs Collector Current
Transfert Characteristics
100
IC (A)
2.5
6
4
60
40
Er
2
VGE=15V
TJ=125°C
RG=18Ω
20
0
0
0
10
20 30 40 50 60
Gate Resistance (ohms)
70
80
0
300
600
900
VCE (V)
1200
1500
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.4
IGBT
0.9
August, 2007
0.7
0.3
0.5
0.2
0.1
0.3
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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4–5
APTGT50A120T1G – Rev 0
Thermal Impedance (°C/W)
0.5
APTGT50A120T1G
Forward Characteristic of diode
100
VCE=600V
D=50%
RG=18Ω
TJ=125°C
TC=75°C
60
50
ZCS
40
80
IF (A)
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
70
ZVS
30
60
TJ=125°C
40
20
10
hard
switching
0
10
20
TJ=125°C
20
TJ=25°C
0
30
40
50
IC (A)
60
70
0
80
0.5
1
1.5
VF (V)
2
2.5
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.8
0.7
0.6
0.5
0.9
0.4
0.5
0.3
0.3
0.2
0.1
Diode
0.7
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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5–5
APTGT50A120T1G – Rev 0
August, 2007
rectangular Pulse Duration (Seconds)