APT5040KFLL
500V 17A 0.400Ω
POWER MOS 7
R
FREDFET
TO-220
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
VDSS
ID
D
S
• Increased Power Dissipation
• Easier To Drive
• TO-220 Package
• FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol
G
D
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT5040KFLL
UNIT
500
Volts
Drain-Source Voltage
17
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
250
Watts
2
W/°C
PD
TJ,TSTG
68
Linear Derating Factor
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
EAS
1
-55 to 150
Amps
17
1
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
Volts
16
4
mJ
425
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
500
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
TYP
MAX
UNIT
Volts
(VGS = 10V, 8.5A)
0.40
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V)
250
Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
5
Volts
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
Ohms
µA
10-2003
Characteristic / Test Conditions
050-7169 Rev -
Symbol
APT5040KFLL
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
C iss
Coss
C rss
Test Conditions
Input Capacitance
VGS = 0V
Output Capacitance
VDS = 25V
Total Gate Charge
Qgs
Gate-Source Charge
3
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
ID = 17A @ 25°C
RESISTIVE SWITCHING
VGS = 15V
Rise Time
td(off)
VDD = 250V
Turn-off Delay Time
tf
ID = 17A @ 25°C
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
6
ns
73
VDD = 333V, VGS = 15V
Eon
nC
2
RG = 0.6Ω
INDUCTIVE SWITCHING @ 25°C
6
UNIT
pF
16
26
8
14
9
4
18
VGS = 10V
Qgd
MAX
1006
234
VDD = 250V
td(on)
tr
TYP
f = 1 MHz
Reverse Transfer Capacitance
Qg
MIN
ID = 17A, RG = 5Ω
26
INDUCTIVE SWITCHING @ 125°C
198
VDD = 333V VGS = 15V
ID = 17A, RG = 5Ω
µJ
47
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
(Body Diode)
68
VSD
Diode Forward Voltage
2
(VGS = 0V, IS = -ID 17A)
1.3
Volts
15
V/ns
dv/
Peak Diode Recovery
dt
dv/
dt
17
5
Reverse Recovery Time
(IS = -ID 17A, di/dt = 100A/µs, VR = 333V)
Tj = 25°C
212
280
Tj = 125°C
272
350
Q rr
Reverse Recovery Charge
(IS = -ID 17A, di/dt = 100A/µs, VR = 333V)
Tj = 25°C
853
1110
Tj = 125°C
1299
1690
IRRM
Peak Recovery Current
(IS = -ID 17A, di/dt = 100A/µs, VR = 333V)
Tj = 25°C
7.8
10
Tj = 125°C
9
12
TYP
MAX
t rr
Amps
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
Junction to Case
RθJA
Junction to Ambient
TBD
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
0.50
0.9
0.40
0.7
0.30
Note:
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7169 Rev -
10-2003
0.60
0.5
0.20
0.3
t1
t2
0.10
0.1
SINGLE PULSE
0.05
10-4
°C/W
4 Starting Tj = +25°C, L = 2.94mH, RG = 25Ω, Peak IL = 17A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID17A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0
10-5
UNIT
.50
RθJC
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 9a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
Typical Performance Curves
APT5040KFLL
RC MODEL
Junction
temp (°C)
0.216 °C/W
0.00367 J/°C
0.284 °C/W
0.0553 J/°C
Power
(watts)
ID, DRAIN CURRENT (AMPERES)
35
VGS=15 &10V
30
6.5V
25
6V
20
5.5V
15
10
5V
5
4.5V
Case temperature (°C)
4V
0
0 2
4
6 8 10 12 14 16 18 20
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
TJ = -55°C
30
20
TJ = +25°C
10
TJ = +125°C
0
0
2
4
6
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
16
GS
1.30
1.20
VGS=10V
1.10
VGS=20V
1.00
0.90
0.80
0
5
10
15
20
25
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
14
12
10
8
6
4
2
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
D
= 10V
2.0
1.5
1.0
0.5
0.0
-50
1.00
0.95
0.90
0.85
-50
= 8.5A
GS
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
I
1.05
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
2.5
V
1.10
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
10-2003
ID, DRAIN CURRENT (AMPERES)
NORMALIZED TO
V
= 10V @ 8.5A
1.15
18
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
1.40
050-7169 Rev -
ID, DRAIN CURRENT (AMPERES)
40
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
Typical Preformance Curves
APT5040KFLL
68
4,000
10
100µS
5
1mS
1
10mS
Coss
100
TC =+25°C
TJ =+150°C
SINGLE PULSE
Crss
.1
10
16
I
D
= 17A
14
VDS=100V
12
10
VDS=250V
VDS=400V
8
6
4
2
0
0
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
1
10
100
500
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Ciss
1,000
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
OPERATION HERE
LIMITED BY RDS (ON)
5
10
15
20
25
30 35 40
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
100
50
TJ =+150°C
10
TJ =+25°C
5
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
50
30
V
DD
R
G
25
T = 125°C
40
J
V
DD
L = 100µH
= 333V
tr and tf (ns)
td(on) and td(off) (ns)
td(off)
20
= 5Ω
R
G
T = 125°C
J
15
L = 100µH
td(on)
20
tr
0
0
250
5
10
15
20
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
V
DD
R
G
0
10
15
20
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
300
= 333V
Eon
250
T = 125°C
J
200
5
= 5Ω
SWITCHING ENERGY (µJ)
SWITCHING ENERGY (µJ)
tf
10
0
10-2003
30
10
5
050-7169 Rev -
= 333V
= 5Ω
L = 100µH
Eon
E ON includes
diode reverse recovery.
150
100
50
Eoff
200
150
V
100
Eoff
I
DD
D
= 333V
= 17A
T = 125°C
J
50
L = 100µH
E ON includes
diode reverse recovery.
0
0
0
4
8
12
16
20
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT5040KFLL
Gate Voltage
90%
10 %
Gate Voltage
T = 125 C
J
t
T = 125 C
J
d(off)
Drain Voltage
td(on)
90%
tr
5%
Drain Current
90%
10%
10 %
5%
tf
Drain Voltage
Switching Energy
0
Drain Current
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT15DF60B
V DD
IC
V CE
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-220AC Package Outline
1.39 (.055)
0.51 (.020)
Drain
10.66 (.420)
9.66 (.380)
5.33 (.210)
4.83 (.190)
6.85 (.270)
5.85 (.230)
16.51 (.650)
14.23 (.560)
4.08 (.161) Dia.
3.54 (.139)
3.42 (.135)
2.54 (.100)
6.35 (.250)
MAX.
Gate
Drain
Source
1.01 (.040) 3-Plcs.
0.38 (.015)
4.82 (.190)
3.56 (.140)
2.79 (.110)
2.29 (.090)
5.33 (.210)
4.83 (.190)
1.77 (.070) 3-Plcs.
1.15 (.045)
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
10-2003
2.92 (.115)
2.04 (.080)
14.73 (.580)
12.70 (.500)
050-7169 Rev -
0.50 (.020)
0.41 (.016)